参数资料
型号: BSS138W
厂商: Fairchild Semiconductor
文件页数: 1/6页
文件大小: 0K
描述: MOSFET N-CH 50V 21MA SOT323
标准包装: 3,000
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 50V
电流 - 连续漏极(Id) @ 25° C: 210mA
开态Rds(最大)@ Id, Vgs @ 25° C: 3.5 欧姆 @ 220mA,10V
Id 时的 Vgs(th)(最大): 1.5V @ 1mA
闸电荷(Qg) @ Vgs: 1.1nC @ 10V
输入电容 (Ciss) @ Vds: 38pF @ 25V
功率 - 最大: 340mW
安装类型: 表面贴装
封装/外壳: SC-70,SOT-323
供应商设备封装: SOT-323
包装: 带卷 (TR)
December 2010
BSS138W
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect
transistor. These products have been designed to
minimize on-state resistance while provide rugged,
reliable, and fast switching performance.These prod-
ucts are particularly suited for low voltage, low current
applications such as small servo motor control, power
MOSFET gate drivers, and other switching applica-
tions.
D
S
G
SOT - 323
Marking : 138
Features
? R DS(ON) = 3.5 Ω @ V GS = 10V, I D = 0.22A
R DS(ON) = 6.0 Ω @ V GS = 4.5V, I D = 0.22A
? High density cell design for extremely low R DS(ON)
? Rugged and Reliable
? Compact industry standard SOT-323 surface mount
package
Absolute Maximum Ratings
T A = 25°C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Value
50
±20
Units
V
V
I D
Drain Current
- Continuous
(Note1)
0.21
A
- Pulsed
0.84
A
T J, T STG
T L
Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering
-55 to +150
300
° C
° C
Purposes, 1/16” from Case for 10 Seconds
Thermal Characteristics
Symbol
Parameter
Value
Units
P D
R θ JA
Maximum Power Dissipation
Derate Above 25 ° C
Thermal Resistance, Junction to Ambient
(Note1)
(Note1)
340
2.72
367
mW
mW/ ° C
° C/W
Package Marking and Ordering Information
Device Marking
138
Device
BSS138W
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
? 2010 Fairchild Semiconductor Corporation
BSS138W Rev. A0
1
www.fairchildsemi.com
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