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参数资料
| 型号： | BSS84_D87Z |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 50V 130MA SOT-23 |
| 标准包装： | 10,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 50V |
| 电流 - 连续漏极(Id) @ 25° C： | 130mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10 欧姆 @ 100mA，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 1.3nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 73pF @ 25V |
| 功率 - 最大： | 360mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23 |
| 包装： | 带卷 (TR) |
February 2013
BSS84
P-Channel Enhancement Mode Field-Effect Transistor
Features
Description
?
?
?
?
-0.13 A, -50 V, R DS(ON) = 10 Ω at V GS = -5 V
Voltage-Controlled P-Channel Small-Signal
Switch
High-Density Cell Design for Low R DS(ON)
High Saturation Current
This P-channel enhancement-mode field-effect
transistor is produced using Fairchild’s proprietary,
high cell density, DMOS technology. This very high
density process minimizes on-state resistance and to
provide rugged and reliable performance and fast
switching. The BSS84 can be used, with a minimum
of effort, in most applications requiring up to 0.13 A
D
D
DC and can deliver current up to 0.52 A. This product
is particularly suited to low-voltage applications
requiring a low-current high-side switch.
S
SOT-23
G
G
S
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only. Values are at T A = 25°C unless otherwise noted.
Drain Current (1)
Symbol
V DSS
V GSS
I D
P D
T J , T STG
T L
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous
Pulsed
Maximum Power Dissipation (1)
Derate Above 25 ° C
Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16” from Case for 10 Seconds
Ratings
? 50
± 20
? 0.13
? 0.52
0.36
2.9
? 55 to +150
300
Unit
V
V
A
A
W
mW / ° C
° C
° C
Thermal Characteristics
R θ JA
Thermal Resistance, Junction-to-Ambient (1)
350
° C/W
Note:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference
is defined as the solder mounting surface of the drain pins. R θ JA is guaranteed by design, while R θ JA is
determined by the user's board design.
a) 350°C/W when mounted on a minimum pad
Scale 1: 1 on letter-size paper.
Package Marking and Ordering Information
Device Marking
SP
Device
BSS84
Reel Size
7’’
Tape width
8mm
Quantity
3000
? 2002 Fairchild Semiconductor Corporation
BSS84 ? Rev. 1.1.0
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| BSS8402DW-7 | MOSFET N+P 50,60V 130MA SC70-6 |
| BSS84DW-7 | MOSFET DUAL P-CHAN -50V SC70-6 |
| BSS84LT1 | MOSFET P-CH 50V 130MA SOT-23 |
| BSS84TC | MOSFET P-CHAN 50V SOT23-3 |
| BSS84V-7 | MOSFET P-CH DUAL SOT-563 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BSS84DW | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| BSS84DW _R1 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| BSS84DW_ R2 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| BSS84DW_1 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| BSS84DW_2 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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