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参数资料
| 型号： | BSS84_D87Z |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 50V 130MA SOT-23 |
| 标准包装： | 10,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 50V |
| 电流 - 连续漏极(Id) @ 25° C： | 130mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10 欧姆 @ 100mA，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 1.3nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 73pF @ 25V |
| 功率 - 最大： | 360mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23 |
| 包装： | 带卷 (TR) |
Electrical Characteristics (2)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV DSS
Δ BV DSS
Δ T J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
V GS = 0 V, I D = –250 μ A
I D = –250 μ A,
Referenced to 25 ℃
–50
–48
V
mV / ℃
V DS = –50 V, V GS = 0 V
–15
μ A
I DSS
I GSS
BV DSS
Zero Gate Voltage Drain Current
Gate–Body Leakage.
Drain–Source Breakdown Voltage
V DS = –50 V, V GS = 0 V,
T J = 125 ° C
V GS = ± 20 V, V DS = 0 V
V GS = 0 V, I D = –250 μ A
–50
–60
± 10
μ A
nA
V
On Characteristics (2)
V GS(th)
V GS(TH)
T J
R DS(on)
I D(on)
g FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V DS = V GS , I D = –1 mA
I D = –1 mA,
Referenced to 25 ℃
V GS = –5 V, I D = –0.10 A
V GS = –5 V, I D = –0.10 A,
T J = 125 ° C
V GS = –5 V, V DS = – 10 V
V DS = –25 V, I D = – 0.10 A
–0.8
–0.6
0.05
–1.7
3
1.2
1.9
0.60
–2
10.0
17.0
V
mV / ℃
Ω
Ω
A
S
Dynamic Characteristics
C ISS
C OSS
C RSS
R G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = –25 V,
V GS = 0 V,
f = 1.0 MHz
V GS = –15 mV, f = 1.0 MHz
73
10
5
9
pF
pF
pF
Ω
Switching Characteristics (2)
t d(on)
Turn–On Delay
2.5
5.0
ns
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn–On Rise Time
Turn–Off Delay
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V DD = –30 V, I D = – 0.27 A,
V GS = –10 V, R GEN = 6 ?
V DS = –25 V, I D = –0.10 A,
V GS = –5 V
6.3
10
4.8
0.9
0.2
0.3
13.0
20
9.6
1.3
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain-Source Diode Forward Current
-0.13
A
d iF / d t = 100 A / μs
V SD
t RR
Q RR
Drain-Source Diode Forward
Voltage
Diode Reverse-Recovery Time
Diode Reverse-Recovery Charge
V GS = 0 V, I S = - 0.26 A (2)
I F = -0.1 A,
(2)
-0.8
10
3
-1.2
V
ns
nC
Note:
2.
Pulse Test: Pulse Width ≤ 300 μ s, Duty Cycle ≤ 2.0%.
? 2002 Fairchild Semiconductor Corporation
BSS84 ? Rev. 1.1.0
2
www.fairchildsemi.com
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