参数资料
型号: BSS84_D87Z
厂商: Fairchild Semiconductor
文件页数: 3/6页
文件大小: 0K
描述: MOSFET P-CH 50V 130MA SOT-23
标准包装: 10,000
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 50V
电流 - 连续漏极(Id) @ 25° C: 130mA
开态Rds(最大)@ Id, Vgs @ 25° C: 10 欧姆 @ 100mA,5V
Id 时的 Vgs(th)(最大): 2V @ 1mA
闸电荷(Qg) @ Vgs: 1.3nC @ 5V
输入电容 (Ciss) @ Vds: 73pF @ 25V
功率 - 最大: 360mW
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: SOT-23
包装: 带卷 (TR)
Typical Characteristics
1
V GS = -5V
-4.5V
-3.5V
2
0.8
0.6
0.4
-3.0V
1.8
1.6
1.4
V GS =-3.0V
-3.5V
0.2
-2.5V
1.2
-4.0V
-4.5V
-5.0V
1
0
0.8
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
1.8
-V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
-I D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with Drain
Current and Gate Voltage
5
1.6
1.4
I D = -0.10A
V GS = -5V
4
I D = -0.05A
1.2
3
1
0.8
0.6
2
T A = 25 o C
T A = 125 o C
0.4
-50
-25
0
25
50
75
100
125
150
1
2
2.5
3
3.5
4
4.5
5
T J , JUNCTION TEMPERATURE ( C)
1
o
Figure 3. On-Resistance Variation with
Temperature
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with Gate-to-
Source Voltage
1
T A = -55 C
0.8
0.6
0.4
V DS = -5V
o
125 o C
25 o C
0.1
0.01
V GS = 0V
T A = 125 o C
25 o C
-55 o C
0.001
0.2
0
0.0001
1
1.5
2
2.5
3
3.5
4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
? 2002 Fairchild Semiconductor Corporation
BSS84 ? Rev. 1.1.0
3
-V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation with
Source Current and Temperature
www.fairchildsemi.com
相关PDF资料
PDF描述
BSS8402DW-7 MOSFET N+P 50,60V 130MA SC70-6
BSS84DW-7 MOSFET DUAL P-CHAN -50V SC70-6
BSS84LT1 MOSFET P-CH 50V 130MA SOT-23
BSS84TC MOSFET P-CHAN 50V SOT23-3
BSS84V-7 MOSFET P-CH DUAL SOT-563
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