参数资料
型号: BSS84_D87Z
厂商: Fairchild Semiconductor
文件页数: 4/6页
文件大小: 0K
描述: MOSFET P-CH 50V 130MA SOT-23
标准包装: 10,000
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 50V
电流 - 连续漏极(Id) @ 25° C: 130mA
开态Rds(最大)@ Id, Vgs @ 25° C: 10 欧姆 @ 100mA,5V
Id 时的 Vgs(th)(最大): 2V @ 1mA
闸电荷(Qg) @ Vgs: 1.3nC @ 5V
输入电容 (Ciss) @ Vds: 73pF @ 25V
功率 - 最大: 360mW
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: SOT-23
包装: 带卷 (TR)
Typical Characteristics (Continued)
5
100
I D = -0.10A
V DS = -8V
-25V
f = 1 MHz
V GS = 0 V
4
3
2
1
-30V
80
60
40
20
C ISS
C OSS
0
0
C RSS
0
0.2
0.4
0.6
0.8
1
0
10
20
30
40
50
Q g , GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
5
-V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics
SINGLE PULSE
R θ JA = 350 ? /W
4
3
2
1
0
T A = 25 ?
0.01
0.1
1
10
100
t 1 , TIME (sec)
Figure 9. Maximum Safe Operating Area
Figure 10. Single-Pulse Maximum Power
Dissipation
1
D = 0.5
R θ JA (t) = r(t) * R θ JA
R θ JA = 350 C/W
0.1
0.01
0.001
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
o
P(pk)
t 1
t 2
T J - T A = P * R θ JA (t)
Duty Cycle, D = t 1 / t 2
0.0001
0.001
0.01
0.1
1
10
100
1000
t 1 , TIME (sec)
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described on page 1.
Transient thermal response will change depending on the circuit board design.
? 2002 Fairchild Semiconductor Corporation
BSS84 ? Rev. 1.1.0
4
www.fairchildsemi.com
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