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| 型号： | BSS84LT1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 50V 130MA SOT-23 |
| 产品变化通告： | Product Obsolescence 07/Jul/2010 |
| 标准包装： | 10 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 50V |
| 电流 - 连续漏极(Id) @ 25° C： | 130mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10 欧姆 @ 100mA，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 30pF @ 5V |
| 功率 - 最大： | 225mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 标准包装 |
| 其它名称： | BSS84LT1OSDKR |
BSS84L, BVSS84L
Power MOSFET
Single P-Channel SOT-23
-50 V, 10 W
? SOT ? 23 Surface Mount Package Saves Board Space
? AEC Q101 Qualified and PPAP Capable ? BVSS84L
? These Devices are Pb ? Free and are RoHS Compliant
http://onsemi.com
V (BR)DSS R DS(ON) MAX
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
? 50 V
10 W @ 10 V
Rating
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage ? Continuous
V DSS
V GS
50
± 20
Vdc
Vdc
P ? Channel
3
Drain Current
mA
Continuous @ T A = 25 ° C
Pulsed Drain Current (t p ≤ 10 m s)
I D
I DM
130
520
Total Power Dissipation @ T A = 25 ° C
Operating and Storage Temperature
Range
Thermal Resistance ? Junction ? to ? Ambient
P D
T J , T stg
R q JA
225
? 55 to
150
556
mW
° C
° C/W
1
2
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
T L
260
° C
3
SOT ? 23
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1
2
CASE 318
STYLE 21
MARKING DIAGRAM & PIN ASSIGNMENT
3
Drain
PD M G
G
1
Gate
2
Source
PD
M
G
= Specific Device Code
= Date Code
= Pb ? Free Package
(*Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BSS84LT1G
BVSS84LT1G
Package
SOT ? 23
(Pb ? Free)
SOT ? 23
Shipping ?
3000 / Tape & Reel
3000 / Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2012
October, 2012 ? Rev. 8
1
Publication Order Number:
BSS84LT1/D
相关PDF资料 |
PDF描述 |
|---|---|
| BSS84TC | MOSFET P-CHAN 50V SOT23-3 |
| BSS84V-7 | MOSFET P-CH DUAL SOT-563 |
| BSS84W-7 | MOSFET P-CH 50V 130MA SC70-3 |
| BVSS123LT1G | MOSFET N-CH 100V 170MA SOT-23-3 |
| BVSS138LT1G | MOSFET N-CH 50V 200MA SOT-23-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BSS84LT1/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET 130 mAmps， 50 Volts |
| BSS84LT1_12 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET Single P-Channel SOT-23 -50 V, 10 |
| BSS84LT1G | 功能描述:MOSFET 50V 130mA P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| BSS84LT1G | 制造商:ON Semiconductor 功能描述:MOSFET |
| BSS84LT3 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 50V V(BR)DSS | 100MA I(D) | TO-236AB |
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