- 您现在的位置：买卖IC网 > Datasheet目录398 > BVSS138LT1G (ON Semiconductor)MOSFET N-CH 50V 200MA SOT-23-3 Datasheet资料下载
参数资料
| 型号： | BVSS138LT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 50V 200MA SOT-23-3 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 50V |
| 电流 - 连续漏极(Id) @ 25° C： | 200mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.5 欧姆 @ 200mA，5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 1mA |
| 输入电容 (Ciss) @ Vds： | 50pF @ 25V |
| 功率 - 最大： | 225mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 带卷 (TR) |
BSS138L, BVSS138L
Power MOSFET
200 mA, 50 V
N ? Channel SOT ? 23
Typical applications are DC ? DC converters, power management in
portable and battery ? powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
Features
? Low Threshold Voltage (V GS(th) : 0.5 V ? 1.5 V) Makes it Ideal for
Low Voltage Applications
? Miniature SOT ? 23 Surface Mount Package Saves Board Space
? BVSS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC ? Q101
http://onsemi.com
200 mA, 50 V
R DS(on) = 3.5 W
N ? Channel
3
?
Qualified and PPAP Capable
These Devices are Pb ? Free and are RoHS Compliant
1
2
MAXIMUM RATINGS (T A = 25 ° C unless otherwise noted)
Rating Symbol Value
Unit
3
MARKING
DIAGRAM
Drain ? to ? Source Voltage
V DSS
50
Vdc
1
Gate ? to ? Source Voltage ? Continuous
Drain Current
? Continuous @ T A = 25 ° C
? Pulsed Drain Current (t p ≤ 10 m s)
V GS
I D
I DM
± 20
200
800
Vdc
mA
2
SOT ? 23
CASE 318
STYLE 21
1
J1 M G
G
Total Power Dissipation @ T A = 25 ° C
P D
225
mW
Operating and Storage Temperature
Range
Thermal Resistance,
Junction ? to ? Ambient
Maximum Lead Temperature for
Soldering Purposes, for 10 seconds
T J , T stg
R q JA
T L
? 55 to 150
556
260
° C
° C/W
° C
J1 = Device Code
M = Date Code*
G = Pb ? Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device Package Shipping ?
BSS138LT1G
BVSS138LT1G
BSS138LT3G
SOT ? 23
(Pb ? Free)
SOT ? 23
(Pb ? Free)
SOT ? 23
3000 / Tape & Reel
3000 / Tape & Reel
10,000 / Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2013
July, 2013 ? Rev. 8
1
Publication Order Number:
BSS138LT1/D
相关PDF资料 |
PDF描述 |
|---|---|
| BXC-10546 | ASSY INPUT FOR BXA-12563 |
| BXC-10549 | ASSEMBLY INPUT CONNECTOR |
| BXC-10550 | ASSEMBLY CONN INP FOR BXA-12549 |
| BXC-10566 | ASSEMBLY OUTPT-CONN |
| BXC-10567 | ASSY OUTPUT FOR BXA-12563 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BVSS84LT1G | 功能描述:MOSFET P-CH 50V 130MA SOT-23-3 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| BVT1 | 制造商:ALLIED TERMINALS 功能描述:SPLICE; BUTT; STRAIGHT; 22-18 AWG; PVC |
| BVT2 | 制造商:ALLIED TERMINALS 功能描述:SPLICE; BUTT; STRAIGHT; 16-14 AWG; PVC |
| BVT2CD1 | 制造商:K.S.Terminals 功能描述:Pack |
| BVT-41T-P1.1 | 制造商:JST Manufacturing 功能描述: |
发布紧急采购，3分钟左右您将得到回复。