- 您现在的位置：买卖IC网 > Datasheet目录398 > BVSS123LT1G (ON Semiconductor)MOSFET N-CH 100V 170MA SOT-23-3 Datasheet资料下载
参数资料
| 型号： | BVSS123LT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 170MA SOT-23-3 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 170mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6 欧姆 @ 100mA，10V |
| Id 时的 Vgs(th)（最大）： | * |
| 输入电容 (Ciss) @ Vds： | 20pF @ 25V |
| 功率 - 最大： | 225mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 带卷 (TR) |
BSS123LT1G,
BVSS123LT1G
Power MOSFET
170 mAmps, 100 Volts
N ? Channel SOT ? 23
Features
? BVSS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC ? Q101
Qualified and PPAP Capable
? These Devices are Pb ? Free and are RoHS Compliant
MAXIMUM RATINGS
http://onsemi.com
170 mAMPS
100 VOLTS
R DS(on) = 6 W
N ? Channel
3
Rating
Symbol
Value
Unit
Drain ? Source Voltage
Gate ? Source Voltage
? Continuous
? Non ? repetitive (t p ≤ 50 m s)
Drain Current
V DSS
V GS
V GSM
100
± 20
± 40
Vdc
Vdc
Vpk
Adc
1
2
? Continuous (Note 1) I D 0.17
? Pulsed (Note 2) I DM 0.68
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1
3
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
3
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
2
SOT ? 23
SA M G
G
Total Device Dissipation FR ? 5 Board
(Note 3) T A = 25 ° C
Derate above 25 ° C
Thermal Resistance,
Junction ? to ? Ambient
P D
R q JA
225
1.8
556
mW
mW/ ° C
° C/W
CASE 318
STYLE 21
SA
M
G
1
Gate
= Device Code
= Date Code
= Pb ? Free Package
2
Source
Junction and Storage Temperature
T J , T stg
? 55 to +150
° C
(*Note: Microdot may be in either location)
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Width v 300 m s, Duty Cycle v 2.0%.
3. FR ? 5 = 1.0 0.75 0.062 in.
*Date Code orientation and/or position may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
? Semiconductor Components Industries, LLC, 2013
November, 2013 ? Rev. 9
1
Publication Order Number:
BSS123LT1/D
相关PDF资料 |
PDF描述 |
|---|---|
| BVSS138LT1G | MOSFET N-CH 50V 200MA SOT-23-3 |
| BXC-10546 | ASSY INPUT FOR BXA-12563 |
| BXC-10549 | ASSEMBLY INPUT CONNECTOR |
| BXC-10550 | ASSEMBLY CONN INP FOR BXA-12549 |
| BXC-10566 | ASSEMBLY OUTPT-CONN |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BVSS138LT1G | 功能描述:MOSFET NFET 50V 200MA 3.5O RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| BVSS84LT1G | 功能描述:MOSFET P-CH 50V 130MA SOT-23-3 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| BVT1 | 制造商:ALLIED TERMINALS 功能描述:SPLICE; BUTT; STRAIGHT; 22-18 AWG; PVC |
| BVT2 | 制造商:ALLIED TERMINALS 功能描述:SPLICE; BUTT; STRAIGHT; 16-14 AWG; PVC |
| BVT2CD1 | 制造商:K.S.Terminals 功能描述:Pack |
发布紧急采购，3分钟左右您将得到回复。