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| 型号： | BSS84-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 50V 130MA SOT23-3 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 50V |
| 电流 - 连续漏极(Id) @ 25° C： | 130mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10 欧姆 @ 100mA，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 1mA |
| 输入电容 (Ciss) @ Vds： | 45pF @ 25V |
| 功率 - 最大： | 300mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 剪切带 (CT) |
| 其它名称： | BSS84DICT |
BSS84
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
V (BR)DSS
-50V
R DS(on) max
10 ? @ V GS = -5V
I D
T A = +25°C
-130mA
?
?
?
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
?
Fast Switching Speed
Description
This MOSFET has been designed to minimize the on-state resistance
(R DS(on) ) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
?
?
?
?
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Applications
Mechanical Data
? Case: SOT23
?
?
?
General Purpose Interfacing Switch
Power Management Functions
Analog Switch
?
?
?
Case Material: UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish (Lead Free Plating) Solderable per
MIL-STD-202, Method 208 e3
?
?
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
Drain
SOT23
D
Gate
Source
G
S
Top View
Ordering Information (Note 4)
Equivalent Circuit
Top View
Part Number
BSS84 -7-F
BSS84Q -7-F
BSS84 -13-F
BSS84Q -13-F
Qualification
Commercial
Automotive
Commercial
Automotive
Case
SOT23
SOT23
SOT23
SOT23
Packaging
3000/Tape & Reel
3000/Tape & Reel
10000/Tape & Reel
10000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
K84 = Product Type Marking Code
Date Code Key
K84
Chengdu A/T Site
K84
Shanghai A/T Site
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Year
Code
1998
J
1999
K
2000
L
2001
M
2002
N
2003
P
2004
R
…
…
2011
Y
2012
Z
2013
A
2014
B
2015
C
2016
D
2017
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
BSS84
Document number: DS30149 Rev. 20 - 2
1 of 5
www.diodes.com
August 2013
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| BSS84_D87Z | MOSFET P-CH 50V 130MA SOT-23 |
| BSS8402DW-7 | MOSFET N+P 50,60V 130MA SC70-6 |
| BSS84DW-7 | MOSFET DUAL P-CHAN -50V SC70-6 |
| BSS84LT1 | MOSFET P-CH 50V 130MA SOT-23 |
| BSS84TC | MOSFET P-CHAN 50V SOT23-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BSS84-7-F | 功能描述:MOSFET -50V 250mW RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| BSS84-7-F-31 | 制造商:DIODES 功能描述:P-Channel NPN MOSFET / SOT-23 |
| BSS84AK | 制造商:NXP Semiconductors 功能描述:MOSFET P CH 50V 0.18A SOT23 制造商:NXP Semiconductors 功能描述:MOSFET, P CH, 50V, 0.18A, SOT23 制造商:NXP Semiconductors 功能描述:MOSFET, P CH, 50V, 0.18A, SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-180mA; Drain Source Voltage Vds:-50V; On Resistance Rds(on):4.5ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.6V ;RoHS Compliant: Yes |
| BSS84AK,215 | 功能描述:MOSFET P-CH -50 V -180 mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| BSS84AK-BR | 功能描述:MOSFET P-CH 50V 180MA TO236AB 制造商:nexperia usa inc. 系列:汽车级，AEC-Q101 零件状态:停產 FET 类型:P 沟道 技术:MOSFET（金属氧化物） 漏源电压（Vdss）:50V 电流 - 连续漏极（Id）（25°C 时）:180mA（Ta） 驱动电压（最大 Rds On，最小 Rds On）:5V，10V 不同 Id 时的 Vgs（th）（最大值）:2.1V @ 250μA 不同 Vgs 时的栅极电荷?（Qg）（最大值）:0.35nC @ 5V Vgs（最大值）:±20V 不同 Vds 时的输入电容（Ciss）（最大值）:36pF @ 25V FET 功能:- 功率耗散（最大值）:1.14W（Tc） 不同?Id，Vgs 时的?Rds On（最大值）:7.5 欧姆 @ 100mA，10V 工作温度:-55°C ~ 150°C（TJ） 安装类型:表面贴装 供应商器件封装:TO-236AB 封装/外壳:TO-236-3，SC-59，SOT-23-3 标准包装:3,000 |
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