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参数资料
| 型号： | BST70A |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | N-channel vertical D-MOS transistor |
| 中文描述： | 500 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封装： | PLASTIC, SOT-54 (TO-92) VARIANT, 3 PIN |
| 文件页数： | 2/12页 |
| 文件大小： | 63K |
| 代理商： | BST70A |
April 1995
2
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
BST70A
DESCRIPTION
N-channel enhancement mode
vertical D-MOS transistor in TO-92
variant envelope and intended for use
in relay, high-speed and
line-transformer drivers.
FEATURES:
Very low R
DS(on)
Direct interface to C-MOS, TTL,
etc.
High-speed switching
No second breakdown
QUICK REFERENCE DATA
PINNING - TO-92 VARIANT
Drain-source voltage
Gate-source voltage (open drain)
Drain current (DC)
Total power dissipation up to T
amb
= 25
°
C
Drain-source ON-resistance
I
D
= 500 mA; V
GS
= 10 V
V
DS
V
GSO
I
D
P
tot
max.
max.
max.
max.
80 V
20 V
0.5 A
1 W
typ.
max.
2
4
R
DS(on)
Transfer admittance
I
D
= 500 mA; V
DS
= 15 V
Y
fs
typ.
300 mS
1
2
3
= source
= gate
= drain
PIN CONFIGURATION
Fig.1 Simplified outline and symbol.
Note
: Various pinout configurations available.
handbook, halfpage
1
3
2
MAM146
s
d
g
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BST72A | 功能描述:MOSFET BULK MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| BST72A,112 | 功能描述:MOSFET BULK MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| BST72A_00 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:N-channel enhancement mode field-effect transistor |
| BST74A | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:N-channel vertical D-MOS transistor |
| BST76 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:N-channel enhancement mode vertical D-MOS transistor |
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