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参数资料
| 型号： | BSZ086P03NS3EG |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 元件分类： | JFETs |
| 英文描述： | 13.5 A, 30 V, 0.0134 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | GREEN, PLASTIC, TSDSON-8 |
| 文件页数： | 2/9页 |
| 文件大小： | 301K |
| 代理商： | BSZ086P03NS3EG |
BSZ086P03NS3E G
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance,
junction - case
R thJC
-
1.8
K/W
Thermal resistance,
junction - ambient
R thJA
6 cm
2 cooling area2)
--
60
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=-250A
-30
-
V
Gate threshold voltage
V GS(th)
V DS=V GS, I D=-105 A
-3.1
-2.5
-1.9
Zero gate voltage drain current
I DSS
V DS=-30 V, V GS=0 V,
T j=25 °C
-
-1
A
V DS=-30 V, V GS=0 V,
T j=125 °C
-
-10
Gate-source leakage current
I GSS
V GS=-25 V, V DS=0 V
-
-10
A
Drain-source on-state resistance
R DS(on)
V GS=-6 V, I D=-20 A
-
8.7
13.4
m
V GS=-10 V, I D=-20 A
-
6.5
8.6
Gate resistance
R G
-
2.2
-
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=-20 A
30
43
-
S
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain
connection. PCB is vertical in still air.
Values
3) See Fig. 3 for more detailed information
Rev. 2.02
page 2
2009-11-16
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BSZ086P03NS3EGATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET P-CH 30V 13.5A 8-Pin TSDSON EP 制造商:Infineon Technologies AG 功能描述:P-KANAL - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET P-CH 30V 40A TSDSON-8 |
| BSZ086P03NS3EGXT | 制造商:Infineon Technologies AG 功能描述:MOSFET P-CH 30V 40A TSDSON-8 |
| BSZ086P03NS3G | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS P3 Power-Transistor |
| BSZ086P03NS3GATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET P-CH 30V 13.5A 8-Pin TSDSON EP 制造商:Infineon Technologies AG 功能描述:P-KANAL - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET P-CH 30V 40A TSDSON-8 |
| BSZ086P03NS3GXT | 制造商:Infineon Technologies AG 功能描述:MOSFET P-CH 30V 40A TSDSON-8 |
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