参数资料
型号: BSZ086P03NS3EG
厂商: INFINEON TECHNOLOGIES AG
元件分类: JFETs
英文描述: 13.5 A, 30 V, 0.0134 ohm, P-CHANNEL, Si, POWER, MOSFET
封装: GREEN, PLASTIC, TSDSON-8
文件页数: 3/9页
文件大小: 301K
代理商: BSZ086P03NS3EG
BSZ086P03NS3E G
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
C iss
-
3190
4785
pF
Output capacitance
C oss
-
1520
2280
Reverse transfer capacitance
C rss
-
110
165
Turn-on delay time
t d(on)
-16
24
ns
Rise time
t r
-46
69
Turn-off delay time
t d(off)
-35
53
Fall time
t f
-8
12
Gate Charge Characteristics
3)
Gate to source charge
Q gs
-
16.1
21.4
nC
Gate charge at threshold
Q g(th)
-
5.0
6.7
Gate to drain charge
Q gd
-
7.4
11.1
Switching charge
Q sw
-
18.4
25.7
Gate charge total
Q g
-
43.2
57.5
Gate plateau voltage
V plateau
-
-4.5
-
V
Output charge
Q oss
V DD=-15 V, V GS=0 V
-
34.9
46.4
nC
Reverse Diode
Diode continous forward current
I S
-
40
A
Diode pulse current
I S,pulse
-
160
Diode forward voltage
V SD
V GS=0 V, I F=-40 A,
T j=25 °C
-
-1.1
V
Reverse recovery time
t rr
V R=15 V, I F=|I S|,
di F/dt =100 A/s
-39-
ns
Reverse recovery charge
Q rr
-34-
nC
T C=25 °C
Values
V GS=0 V, V DS=-15 V,
f =1 MHz
V DD=-15 V, V GS=-
10 V, I D=-20 A,
R G=6
V DD=-15 V, I D=20 A,
V GS=0 to -10 V
Rev. 2.02
page 3
2009-11-16
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