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参数资料
| 型号： | BTA140-700 |
| 英文描述： | TRIAC|700V V(DRM)|25A I(T)RMS|TO-220 |
| 中文描述： | 可控硅| 700V的五（DRM）的| 25A条口（T）的有效值|至220 |
| 文件页数： | 3/6页 |
| 文件大小： | 44K |
| 代理商： | BTA140-700 |
Philips Semiconductors
Product specification
Triacs
BTA140 series
Fig.1. Maximum on-state dissipation, P
, versus rms
on-state current, I
T(RMS)
, where
α
= conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤
20ms.
Fig.3. Maximum permissible non-repetitive peak
on-state current I
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
mb
≤
91C.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25C), versus junction temperature T
j
.
0
5
10
15
20
25
30
0
10
20
30
40
= 180
120
90
60
30
IT(RMS) / A
Ptot / W
Tmb(max) / C
125
115
105
95
85
1
-50
0
50
Tmb / C
100
150
0
5
10
15
20
25
30
BTA140
91 C
IT(RMS) / A
10us
100us
1ms
T / s
10ms
100ms
10
100
1000
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
dI /dt limit
T2- G+ quadrant
0.01
0.1
1
10
0
10
20
30
40
50
surge duration / s
IT(RMS) / A
1
10
Number of cycles at 50Hz
100
1000
0
50
100
150
200
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
-50
0
50
100
150
0.4
0.6
0.8
1
1.2
1.4
1.6
Tj / C
VGT(Tj)
VGT(25 C)
May 2003
3
Rev 1.500
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相关代理商/技术参数 |
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| BTA140-800127 | 制造商:NXP Semiconductors 功能描述:Triac |
| BTA140B | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Triacs |
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