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参数资料
| 型号： | BTA151-650R |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 晶闸管 |
| 英文描述： | Thyristors sensitive gate |
| 中文描述： | 12 A, 650 V, SCR |
| 封装： | PLASTIC, SOT-82, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 43K |
| 代理商： | BTA151-650R |
Philips Semiconductors
Product specification
Thyristors
sensitive gate
BTA151 series
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-mb
Thermal resistance
junction to mounting base
R
th j-a
Thermal resistance
junction to ambient
CONDITIONS
MIN.
-
TYP.
-
MAX.
1.3
UNIT
K/W
in free air
-
60
-
K/W
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
I
GT
Gate trigger current
I
L
Latching current
I
H
Holding current
V
T
On-state voltage
V
GT
Gate trigger voltage
CONDITIONS
V
D
= 12 V; I
T
= 0.1 A
V
D
= 12 V; I
GT
= 0.1 A
V
= 12 V; I
GT
= 0.1 A
I
T
= 23 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= V
DRM(max)
; I
T
= 0.1 A; T
j
= 125 C
V
D
= V
DRM(max)
; V
R
= V
RRM(max)
; T
j
= 125 C
MIN.
-
-
-
-
-
0.25
-
TYP.
2
10
7
1.4
0.6
0.4
0.1
MAX.
4
40
16
1.75
1.5
-
0.5
UNIT
mA
mA
mA
V
V
V
mA
I
D
, I
R
Off-state leakage current
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
dV
D
/dt
Critical rate of rise of
off-state voltage
CONDITIONS
V
= 67% V
; T
j
= 125 C;
exponential waveform
MIN.
TYP.
MAX.
UNIT
Gate open circuit
R
= 100
50
200
-
130
1000
2
-
-
-
V/
μ
s
V/
μ
s
μ
s
t
gt
Gate controlled turn-on
time
Circuit commutated
turn-off time
I
TM
= 40 A; V
D
= V
DRM
; I
G
= 0.1 A;
dI
G
/dt = 5 A/
μ
s
V
D
= 67% V
; I
TM
= 20 A; V
R
= 25 V;
dI
TM
/dt = 30 A/
μ
s; dV
D
/dt = 50 V/
μ
s;
R
GK
= 100
t
q
-
70
-
μ
s
September 1997
2
Rev 1.200
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