参数资料
型号: BTS410-D2
厂商: SIEMENS AG
英文描述: Smart Highside Power Switch
中文描述: 智能阻抗高侧电源开关
文件页数: 11/14页
文件大小: 182K
代理商: BTS410-D2
BTS 410 D2
Semiconductor Group
6
Truth Table
Input-
Output
Status
level
412
B2
410
D2
410
E2/F2
410
G2
410
H2
Normal
operation
L
H
L
H
H
H
H
Open load
L
H
14)
H
L
H
H
L
H
L
H
L
H
Short circuit
to GND
L
H
L
H
L
H
L
H
L
H
L
Short circuit
to Vbb
L
H
L
H
H
H (L15))
H
H (L15))
H
H (L15))
L
H
Overtem-
perature
L
H
L
L
L
L
Under-
voltage
L
H
L
L16)
L16)
L16)
H
Overvoltage
L
H
L
L
L
H
L = "Low" Level
X = don't care
Z = high impedance, potential depends on external circuit
H = "High" Level
Status signal after the time delay shown in the diagrams (see fig 5. page 11...12)
14
) Power Transistor off, high impedance, versions BTS 410H, BTS 412B: internal pull up current source for
open load detection.
15
) Low resistance short V
bb to output may be detected in ON-state by the no-load-detection
16
) No current sink capability during undervoltage shutdown
Terms
PROFET
V
IN
ST
OUT
GND
bb
VST
V
IN
I ST
I IN
V
bb
Ibb
I L
VOUT
I
GND
VON
1
2
4
3
5
R
GND
Input circuit (ESD protection)
IN
GND
I
R
ZD
I
I1
I2
ESD-
ZDI1 6 V typ., ESD zener diodes are not to be used as
voltage clamp at DC conditions. Operation in this mode
may result in a drift of the zener voltage (increase of up
to 1 V).
Status output
ST
V
Logic
GND
ESD-
ZD
Zener diode: 6 V typ., max 5.0 mA, VLogic 5 V typ,
ESD zener diodes are not to be used as voltage clamp
at DC conditions. Operation in this mode may result in
a drift of the zener voltage (increase of up to 1 V).
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