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参数资料
| 型号： | BTS410-D2 |
| 厂商： | SIEMENS AG |
| 英文描述： | Smart Highside Power Switch |
| 中文描述： | 智能阻抗高侧电源开关 |
| 文件页数： | 8/14页 |
| 文件大小： | 182K |
| 代理商： | BTS410-D2 |
BTS 410 D2
Semiconductor Group
3
Electrical Characteristics
Parameter and Conditions
Symbol
Values
Unit
at
Tj = 25 °C, Vbb = 12 V unless otherwise specified
min
typ
max
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
IL = 1.6 A
Tj=25 °C:
Tj=150 °C:
RON
--
190
390
220
440
m
Nominal load current, ISO Norm (pin 3 to 5)
VON = 0.5 V, TC = 85 °C
IL(ISO)
1.6
1.8
--
A
Output current (pin 5) while GND disconnected or
GND pulled up,
Vbb=30 V, VIN= 0, see diagram
page 7,
Tj =-40...+150°C
IL(GNDhigh)
--
1
mA
Turn-on time
IN
to 90%
VOUT:
Turn-off time
IN
to 10%
VOUT:
RL = 12
, Tj =-40...+150°C
ton
toff
12
5
--
125
85
s
Slew rate on
10 to 30%
VOUT, RL = 12
, Tj =-40...+150°C
d
V /dton
--
3
V/
s
Slew rate off
70 to 40%
VOUT, RL = 12
, Tj =-40...+150°C
-d
V/dtoff
--
6
V/
s
Operating Parameters
Operating voltage 6)
Tj =-40...+150°C: Vbb(on)
4.7
--
42
V
Undervoltage shutdown
Tj =25°C:
Tj =-40...+150°C:
Vbb(under)
2.9
2.7
--
4.5
4.7
V
Undervoltage restart
Tj =-40...+150°C: Vbb(u rst)
--
4.9
V
Undervoltage restart of charge pump
see diagram page 12
Vbb(ucp)
--
5.6
6.0
V
Undervoltage hysteresis
V
bb(under) = Vbb(u rst) - Vbb(under)
V
bb(under)
--
0.1
--
V
Overvoltage shutdown
Tj =-40...+150°C: Vbb(over)
42
--
52
V
Overvoltage restart
Tj =-40...+150°C: Vbb(o rst)
40
--
V
Overvoltage hysteresis
Tj =-40...+150°C: Vbb(over)
--
0.1
--
V
Overvoltage protection7)
Tj =-40...+150°C:
Ibb=4 mA
Vbb(AZ)
65
70
--
V
Standby current (pin 3)
Tj=-40...+25°C:
VIN=0, IST
≤0,
Tj= 150°C:
Ibb(off)
--
10
18
15
25
A
Leakage output current (included in
Ibb(off))
VIN=0
IL(off)
--
20
A
Operating current (Pin 1)8),
VIN=5 V,
Tj =-40...+150°C
IGND
--
1
2.1
mA
6
)
At supply voltage increase up to
Vbb= 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V
7)
Meassured without load. See also
VON(CL) in table of protection functions and circuit diagram page 7.
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