参数资料
| 型号： | BU1572GUW-E2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 7/9页 |
| 文件大小： | 0K |
| 描述： | IC VID PROCESSER AIE RT 63VBGA |
| 标准包装： | 2,500 |
| 类型： | 适应型图形增强器（AIE） |
| 应用： | 视频播放器 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 63-VFBGA |
| 供应商设备封装： | 63-VBGA |
| 包装： | 带卷 (TR) |
74LVC1G57
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 6 — 6 December 2011
5 of 20
NXP Semiconductors
74LVC1G57
Low-power configurable multiple function gate
8.
Limiting values
[1]
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2]
When VCC = 0 V (Power-down mode), the output voltage can be 5.5 V in normal operation.
[3]
For SC-88 and SC-74 packages: above 87.5
C the value of P
tot derates linearly with 4.0 mW/K.
For XSON6 packages: above 118
C the value of P
tot derates linearly with 7.8 mW/K.
9.
Recommended operating conditions
Fig 11. Buffer
001aab590
B
B6
Y
1
5
2
4
3Y
VCC
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
Conditions
Min
Max
Unit
VCC
supply voltage
0.5
+6.5
V
IIK
input clamping current
VI <0V
50
-
mA
VI
input voltage
0.5
+6.5
V
IOK
output clamping current
VO >VCC or VO <0V
-
50
mA
VO
output voltage
Active mode
0.5
+6.5
V
Power-down mode
0.5
+6.5
V
IO
output current
VO =0VtoVCC
-
50
mA
ICC
supply current
-
+100
mA
IGND
ground current
100
-
mA
Tstg
storage temperature
65
+150
C
Ptot
total power dissipation
Tamb = 40 Cto+125 C
-250
mW
Table 7.
Recommended operating conditions
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCC
supply voltage
1.65
-
5.5
V
VI
input voltage
0
-
5.5
V
VO
output voltage
Active mode
0
-
VCC
V
VCC = 0 V; Power-down mode
0
-
5.5
V
Tamb
ambient temperature
40
-
+125
C
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