- 您现在的位置：买卖IC网 > PDF目录373031 > BU2507AF (NXP SEMICONDUCTORS) Silicon Diffused Power Transistor PDF资料下载
参数资料
| 型号： | BU2507AF |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 功率晶体管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 8 A, 700 V, NPN, Si, POWER TRANSISTOR |
| 封装： | PLASTIC, FULL PACK-3 |
| 文件页数： | 1/6页 |
| 文件大小： | 53K |
| 代理商： | BU2507AF |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2507AF
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors.
Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
V
CEsat
I
Csat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector saturation current
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
-
4
0.25
MAX.
1500
700
8
15
45
1.0
5.0
-
0.5
UNIT
V
V
A
A
W
V
V
A
μ
s
T
hs
≤
25 C
I
C
= 4 A; I
B
= 0.95 A
I
= 4 A; I
B
= 0.8 A
f = 16kHz
I
Csat
= 4 A; f = 16kHz
PINNING - SOT199
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector-emitter voltage peak value
V
CEO
Collector-emitter voltage (open base)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
-I
B(AV)
Reverse base current
-I
BM
Reverse base current peak value
1
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-
-65
-
MAX.
1500
700
8
15
4
6
100
5
45
150
150
UNIT
V
V
A
A
A
A
mA
A
W
C
C
average over any 20 ms period
T
hs
≤
25 C
1
2
3
case
b
c
e
1
Turn-off current.
September 1997
1
Rev 1.100
相关PDF资料 |
PDF描述 |
|---|---|
| BU2508AF | Silicon Diffused Power Transistor |
| BU2508AF | NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR(COLOR TV HORIZONTAL OUTPUT APPLICATIONS) |
| BU2508AW | Silicon Diffused Power Transistor |
| BU2508AX | Silicon Diffused Power Transistor |
| BU2508A | Silicon Diffused Power Transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BU2507AX | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| BU2507DF | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU2507DX | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| BU2507FV | 制造商:ROHM 制造商全称:Rohm 功能描述:High-precision 10bit 4ch/6ch D/A Converters |
| BU2507FV-E2 | 功能描述:数模转换器- DAC 10 BIT D/A CNVTR 14-Pin RoHS:否 制造商:Texas Instruments 转换器数量:1 DAC 输出端数量:1 转换速率:2 MSPs 分辨率:16 bit 接口类型:QSPI, SPI, Serial (3-Wire, Microwire) 稳定时间:1 us 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-14 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。