- 您现在的位置：买卖IC网 > PDF目录373031 > BU2508AF (NXP SEMICONDUCTORS) Silicon Diffused Power Transistor PDF资料下载
参数资料
| 型号： | BU2508AF |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 功率晶体管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 8 A, 700 V, NPN, Si, POWER TRANSISTOR |
| 封装： | PLASTIC, SOT-199, 3 PIN |
| 文件页数： | 1/7页 |
| 文件大小： | 70K |
| 代理商： | BU2508AF |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508AF
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
4.5
0.4
MAX.
1500
700
8
15
45
1
-
0.6
UNIT
V
V
A
A
W
V
A
μ
s
T
hs
≤
25 C
I
C
= 4.5 A; I
B
= 1.1 A
I
Csat
= 4.5 A; I
B(end)
= 1.1 A
PINNING - SOT199
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector-emitter voltage peak value
V
CEO
Collector-emitter voltage (open base)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
-I
B(AV)
Reverse base current
-I
BM
Reverse base current peak value
1
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-
-65
-
MAX.
1500
700
8
15
4
6
100
5
45
150
150
UNIT
V
V
A
A
A
A
mA
A
W
C
C
average over any 20 ms period
T
hs
≤
25 C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to heatsink
Junction to ambient
CONDITIONS
without heatsink compound
with heatsink compound
in free air
TYP.
-
-
35
MAX.
3.7
2.8
-
UNIT
K/W
K/W
K/W
1
2
3
case
b
c
e
1
Turn-off current.
September 1997
1
Rev 1.500
相关PDF资料 |
PDF描述 |
|---|---|
| BU2508AF | NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR(COLOR TV HORIZONTAL OUTPUT APPLICATIONS) |
| BU2508AW | Silicon Diffused Power Transistor |
| BU2508AX | Silicon Diffused Power Transistor |
| BU2508A | Silicon Diffused Power Transistor |
| BU2508DW | Silicon Diffused Power Transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BU2508AF | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-199 |
| BU2508AW | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| BU2508AX | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-399 |
| BU2508AX | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-399 |
| BU2508AX/B | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:TRANSISTOR POWER SOT-399 |
发布紧急采购，3分钟左右您将得到回复。