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参数资料
| 型号： | BU2508AF |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 功率晶体管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 8 A, 700 V, NPN, Si, POWER TRANSISTOR |
| 封装： | PLASTIC, SOT-199, 3 PIN |
| 文件页数： | 5/7页 |
| 文件大小： | 70K |
| 代理商： | BU2508AF |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508AF
Fig.13. Forward bias safe operating area. T
hs
= 25C
I Region of permissible DC operation.
II Extension for repetitive pulse operation.
NB: Mounted with heatsink compound and
30
±
5 newton force on the centre of
the envelope.
Fig.14. Normalised power dissipation.
PD% = 100
P
D
/P
D 25C
= f (T
hs
)
Fig.15. Forward bias safe operating area. T
hs
= 25C
I Region of permissible DC operation.
II Extension for repetitive pulse operation.
NB: Mounted without heatsink compound and
30
±
5 newton force on the centre of
the envelope.
1
10
100
1000
100
10
1
0.1
0.01
tp =
10 us
100 us
1 ms
10 ms
DC
IC / A
VCE / V
ICM max
IC max
= 0.01
II
I
Ptot max
1
10
100
1000
100
10
1
0.1
0.01
tp =
10 us
100 us
1 ms
10 ms
DC
IC / A
VCE / V
ICM max
IC max
= 0.01
II
I
Ptot max
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
September 1997
5
Rev 1.500
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| BU2508AW | Silicon Diffused Power Transistor |
| BU2508AX | Silicon Diffused Power Transistor |
| BU2508A | Silicon Diffused Power Transistor |
| BU2508DW | Silicon Diffused Power Transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BU2508AF | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-199 |
| BU2508AW | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| BU2508AX | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-399 |
| BU2508AX | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-399 |
| BU2508AX/B | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:TRANSISTOR POWER SOT-399 |
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