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参数资料
| 型号： | BU2508AF |
| 厂商： | 永盛国际集团 |
| 英文描述： | NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR(COLOR TV HORIZONTAL OUTPUT APPLICATIONS) |
| 中文描述： | npn型三重扩散型平面硅晶体管（彩电产量的横向应用） |
| 文件页数： | 2/7页 |
| 文件大小： | 70K |
| 代理商： | BU2508AF |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508AF
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
Repetitive peak voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
R.H.
≤
65 % ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
-
22
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
2
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
= 7.5 V; I
C
= 0 A
I
B
= 1 mA
I
= 0 A; I
C
= 100 mA;
L = 25 mH
MIN.
-
-
TYP.
-
-
MAX.
1.0
2.0
UNIT
mA
mA
I
BV
EBO
V
CEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
-
-
1.0
-
-
mA
V
V
7.5
700
13.5
-
V
CEsat
V
BEsat
h
FE
h
FE
Collector-emitter saturation voltages I
C
= 4.5 A; I
B
= 1.1 A
Base-emitter saturation voltage
DC current gain
-
-
-
4
-
-
1.0
1.1
-
7.0
V
V
I
C
= 4.5 A; I
= 1.7 A
I
C
= 100 mA; V
= 5 V
I
C
= 4.5 A; V
CE
= 1 V
13
5.5
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
C
c
Collector capacitance
Switching times (16 kHz line
deflection circuit)
t
s
Turn-off storage time
t
f
Turn-off fall time
Switching times (38 kHz line
deflection circuit)
CONDITIONS
I
E
= 0 A; V
CB
= 10 V; f = 1 MHz
I
= 4.5 A; I
B(end)
= 1.1 A; L
B
= 6
μ
H;
-V
BB
= 4 V; (-dI
B
μ
s)
TYP.
80
MAX.
-
UNIT
pF
5.0
0.4
6.0
0.6
μ
s
μ
s
I
= 4.0 A; I
B(end)
= 0.9 A; L
B
= 6
μ
H;
-V
BB
= 4 V; (-dI
B
μ
s)
t
s
t
f
Turn-off storage time
Turn-off fall time
4.7
0.25
5.7
0.35
μ
s
μ
s
2
Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.500
相关PDF资料 |
PDF描述 |
|---|---|
| BU2508AW | Silicon Diffused Power Transistor |
| BU2508AX | Silicon Diffused Power Transistor |
| BU2508A | Silicon Diffused Power Transistor |
| BU2508DW | Silicon Diffused Power Transistor |
| BU2508DX | Silicon Diffused Power Transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BU2508AF | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-199 |
| BU2508AW | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| BU2508AX | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-399 |
| BU2508AX | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-399 |
| BU2508AX/B | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:TRANSISTOR POWER SOT-399 |
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