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参数资料
| 型号： | BU2508DX |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 功率晶体管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 8 A, 700 V, NPN, Si, POWER TRANSISTOR |
| 封装： | PLASTIC, FULL PACK-3 |
| 文件页数： | 1/7页 |
| 文件大小： | 73K |
| 代理商： | BU2508DX |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508DX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low
worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
V
F
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
4.5
1.6
0.4
MAX.
1500
700
8
15
45
1.0
-
2.0
0.6
UNIT
V
V
A
A
W
V
A
V
μ
s
T
hs
≤
25 C
I
C
= 4.5 A; I
B
= 1.12 A
I
F
= 4.5 A
I
Csat
= 4.5 A; I
B(end)
= 1.1 A
PINNING - SOT399
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector-emitter voltage peak value
V
CEO
Collector-emitter voltage (open base)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
-I
B(AV)
Reverse base current
-I
BM
Reverse base current peak value
1
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
700
8
15
4
6
100
5
45
150
150
UNIT
V
V
A
A
A
A
mA
A
W
C
C
average over any 20 ms period
T
hs
≤
25 C
case
1 2 3
b
c
e
Rbe
1
Turn-off current.
July 1998
1
Rev 2.500
相关PDF资料 |
PDF描述 |
|---|---|
| BU2508D | Silicon Diffused Power Transistor |
| BU2515AF | Silicon Diffused Power Transistor |
| BU2515AX | Silicon Diffused Power Transistor |
| BU2515DF | Silicon Diffused Power Transistor |
| BU2515DX | POWERLINE: RP15-S_DEW - 4:1 Wide Input Voltage Range- 15 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Standard 50.8 x40.6x10.2mm Package- Efficiency to 82% |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BU2508DX PHILIPS | 制造商:Distributed By MCM 功能描述:Bu2508Dx 1500V 8A 45W Bce Transistor SOT-93 Power NPN |
| BU2508DX/B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR HIGH VOLT SOT-399 |
| BU2508-E3 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Enhanced isoCink Bridge Rectifiers |
| BU2508-E3/45 | 功能描述:桥式整流器 25 Amp 800 Volt RoHS:否 制造商:Vishay 产品:Single Phase Bridge 峰值反向电压:1000 V 最大 RMS 反向电压: 正向连续电流:4.5 A 最大浪涌电流:450 A 正向电压下降:1 V 最大反向漏泄电流:10 uA 功率耗散: 最大工作温度:+ 150 C 长度:30.3 mm 宽度:4.1 mm 高度:20.3 mm 安装风格:Through Hole 封装 / 箱体:SIP-4 封装:Tube |
| BU2508-E3/51 | 功能描述:桥式整流器 25 Amp 800 Volt RoHS:否 制造商:Vishay 产品:Single Phase Bridge 峰值反向电压:1000 V 最大 RMS 反向电压: 正向连续电流:4.5 A 最大浪涌电流:450 A 正向电压下降:1 V 最大反向漏泄电流:10 uA 功率耗散: 最大工作温度:+ 150 C 长度:30.3 mm 宽度:4.1 mm 高度:20.3 mm 安装风格:Through Hole 封装 / 箱体:SIP-4 封装:Tube |
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