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参数资料
| 型号： | BU2508D |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 功率晶体管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 8 A, 700 V, NPN, Si, POWER TRANSISTOR |
| 文件页数： | 1/7页 |
| 文件大小： | 51K |
| 代理商： | BU2508D |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508D
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers.
Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
V
CEsat
I
Csat
V
F
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
-
4.5
1.6
0.4
MAX.
1500
700
8
15
125
1.0
5.0
-
2.0
0.6
UNIT
V
V
A
A
W
V
V
A
V
μ
s
T
mb
≤
25 C
I
C
B
= 1.29 A
I
C
= 4.5 A; I
B
= 1.1 A
I
F
= 4.5 A
I
CM
= 4.5 A; I
B(end)
= 1.1 A
PINNING - SOT93
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
tab
collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector-emitter voltage peak value
V
CEO
Collector-emitter voltage (open base)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
-I
B(AV)
Reverse base current
-I
BM
Reverse base current peak value
1
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-
-65
-
MAX.
1500
700
8
15
4
6
100
5
125
150
150
UNIT
V
V
A
A
A
A
mA
A
W
C
C
average over any 20 ms period
T
mb
≤
25 C
1
2
3
tab
b
c
e
Rbe
1
Turn-off current.
December 1995
1
Rev 1.200
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BU2508DF | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 700V 8A 3-Pin (3+Tab) TO-247F Bulk 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-199 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| BU2508DF PHILIPS | 制造商:Distributed By MCM 功能描述:Bu2508Df 1.5Kv 8A 45W Bce Philips Transistor SOT-199 NPN |
| BU2508DF | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-199 |
| BU2508DF/B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR HIGH VOLT SOT-199 |
| BU2508DW | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
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