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参数资料
| 型号： | BU2508D |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 功率晶体管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 8 A, 700 V, NPN, Si, POWER TRANSISTOR |
| 文件页数： | 2/7页 |
| 文件大小： | 51K |
| 代理商： | BU2508D |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508D
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
-
in free air
TYP.
-
45
MAX.
1.0
-
UNIT
K/W
K/W
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
2
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
= 7.5 V; I
C
= 0 A
I
B
= 600 mA
V
= 7.5 V
I
= 0 A; I
C
= 100 mA;
L = 25 mH
MIN.
-
-
TYP.
-
-
MAX.
1.0
2.0
UNIT
mA
mA
I
BV
EBO
R
be
V
CEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Base-emitter resistance
Collector-emitter sustaining voltage
140
7.5
-
700
-
390
-
-
-
mA
V
V
13.5
33
-
V
CEsat
V
CEsat
V
BEsat
h
FE
h
FE
V
F
Collector-emitter saturation voltages I
C
= 4.5 A; I
B
= 1.1 A
-
-
-
7
4
-
-
-
-
5.0
1.0
1.3
23
7.5
2.0
V
V
V
I
C
= 4.5 A; I
B
= 1.29 A
I
C
= 4.5 A; I
B
= 1.7 A
I
C
= 1 A; V
= 5 V
I
C
= 4.5 A; V
CE
= 1 V
I
F
= 4.5 A
Base-emitter saturation voltage
DC current gain
13
5.5
1.6
Diode forward voltage
V
DYNAMIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
C
c
Collector capacitance
Switching times (16 kHz line
deflection circuit)
t
s
Turn-off storage time
t
f
Turn-off fall time
Switching times (38 kHz line
deflection circuit)
t
s
Turn-off storage time
t
f
Turn-off fall time
CONDITIONS
I
E
= 0 A; V
CB
= 10 V; f = 1 MHz
I
= 4.5 A; I
= 1.1 A; L
B
= 6
μ
H;
-V
BB
= 4 V; (-dI
B
/dt = 0.6 A/
μ
s)
TYP.
80
MAX.
-
UNIT
pF
5.0
0.4
6.0
0.6
μ
s
μ
s
I
= 4.0 A; I
= 0.9 A; L
B
= 6
μ
H;
-V
BB
= 4 V; (-dI
B
/dt = 0.6 A/
μ
s)
4.7
0.25
5.7
0.35
μ
s
μ
s
2
Measured with half sine-wave voltage (curve tracer).
December 1995
2
Rev 1.200
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