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参数资料
| 型号： | BU2520AF |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 功率晶体管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 10 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 封装： | PLASTIC, SOT-199, 3 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 79K |
| 代理商： | BU2520AF |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520AF
Fig.7. Typical DC current gain. h
FE
= f (I
C
)
parameter V
CE
Fig.8. Typical base-emitter saturation voltage.
V
BE
sat = f (I
C
); parameter I
C
/I
B
Fig.9. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
C
); parameter I
C
/I
B
Fig.10. Typical base-emitter saturation voltage.
V
BE
sat = f (I
B
); parameter I
C
Fig.11. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
B
); parameter I
C
Fig.12. Typical turn-off losses.T
= 85C
Eoff = f (I
B
); parameter I
C
; parameter frequency
0.1
10
IC / A
hFE
100
10
1
1
100
Tj = 25 C
Tj = 125 C
5 V
1 V
0
1
2
3
4
IB / A
VBESAT / V
1.2
1.1
1
0.9
0.8
0.7
0.6
Tj = 25 C
Tj = 125 C
IC=
8 A
6 A
5 A
4 A
0.1
1
10
IC / A
VBESAT / V
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
Tj = 25 C
Tj = 125 C
IC/IB=
3
4
5
0.1
1
10
IB / A
VCESAT / V
10
1
0.1
Tj = 25 C
Tj = 125 C
IC = 4 A
5 A
6 A
8 A
0.1
10
IC / A
VCESAT / V
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1
100
Tj = 25 C
Tj = 125 C
IC/IB =
4
5
3
0.1
1
10
IB / A
Eoff / uJ
1000
100
10
IC = 6 A
5 A
16 kHz
32 kHz
September 1997
4
Rev 1.500
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BU2520AF/B | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:TRANSISTOR LEISTUNGS BIPOLAR |
| BU2520AW | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| BU2520AW/B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR LEISTUNGS BIPOLAR |
| BU2520AX | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-399 |
| BU2520AX | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-399 |
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