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参数资料
| 型号： | BU4523AX |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 功率晶体管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 11 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 封装： | PLASTIC, SOT-399, 3 PIN |
| 文件页数： | 1/7页 |
| 文件大小： | 66K |
| 代理商： | BU4523AX |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4523AX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope
intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
8
6.5
0.3
0.14
MAX.
1500
800
11
29
45
3.0
-
-
0.4
-
UNIT
V
V
A
A
W
V
A
A
μ
s
μ
s
T
hs
≤
25 C
I
= 8 A; I
B
= 2 A
f = 16 kHz
f = 70 kHz
I
Csat
= 8 A; f = 16 kHz
I
Csat
= 6.5 A; f = 70 kHz
t
f
Fall time
PINNING - SOT399
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector-emitter voltage peak value
V
CEO
Collector-emitter voltage (open base)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
-I
BM
Reverse base current peak value
1
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
11
29
7
10
7
45
150
150
UNIT
V
V
A
A
A
A
A
W
C
C
T
hs
≤
25 C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
TYP.
-
35
MAX.
2.8
-
UNIT
K/W
K/W
case
1 2 3
b
c
e
1
Turn-off current.
May 1998
1
Rev 1.100
相关PDF资料 |
PDF描述 |
|---|---|
| BU4523DF | Silicon Diffused Power Transistor |
| BU4523DW | Silicon Diffused Power Transistor |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BU4523DF | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4523DW | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4523DX | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4525AF | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4525AL | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
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