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参数资料
| 型号： | BU4523AX |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 功率晶体管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 11 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 封装： | PLASTIC, SOT-399, 3 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 66K |
| 代理商： | BU4523AX |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4523AX
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
Repetitive peak voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
R.H.
≤
65 % ; clean and dustfree
MIN.
-
TYP.
-
MAX.
2500
UNIT
V
-
22
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
2
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
= 6 V; I
C
= 0 A
I
B
= 1 mA
I
= 0 A; I
C
= 100 mA;
L = 25 mH
I
C
= 8 A; I
B
= 2 A
I
C
= 8 A; I
B
= 2 A
I
C
= 1 A; V
CE
= 5 V
I
C
= 8 A; V
CE
= 5 V
MIN.
-
-
TYP.
-
-
MAX.
1.0
2.0
UNIT
mA
mA
I
BV
EBO
V
CEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
-
-
100
-
-
μ
A
V
V
7.5
800
12.5
-
V
CEsat
V
BEsat
h
FE
h
FE
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
-
-
3.0
1.1
-
7.3
V
V
0.85
-
4.2
0.95
14
5.8
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
Switching times (16 kHz line
deflection circuit)
t
s
Turn-off storage time
t
f
Turn-off fall time
Switching times (70 kHz line
deflection circuit)
t
s
Turn-off storage time
t
f
Turn-off fall time
CONDITIONS
I
Csat
= 8.0 A;I
B1
= 1.6 A
(I
B2
= -4.0 A)
TYP.
MAX.
UNIT
4.5
0.30
5.5
0.40
μ
s
μ
s
I
Csat
= 6.5 A;I
B1
= 1.3 A
(I
B2
= -3.9 A)
2.3
0.14
-
-
μ
s
μ
s
2
Measured with half sine-wave voltage (curve tracer).
May 1998
2
Rev 1.100
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