参数资料
型号: BUK110-50DL
厂商: NXP SEMICONDUCTORS
元件分类: JFETs
英文描述: PowerMOS transistor Logic level TOPFET
中文描述: 45 A, 50 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
文件页数: 1/10页
文件大小: 90K
代理商: BUK110-50DL
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK110-50DL
DESCRIPTION
QUICK REFERENCE DATA
Monolithic temperature and
overload protected logic level power
MOSFET in a 3 pin plastic surface
mount envelope, intended as a
general purpose switch for
automotive systems and other
applications.
SYMBOL
PARAMETER
MAX.
UNIT
V
DS
I
D
P
D
T
j
R
DS(ON)
Continuous drain source voltage
Continuous drain current
Total power dissipation
Continuous junction temperature
Drain-source on-state resistance
50
45
125
150
35
V
A
W
C
m
APPLICATIONS
I
ISL
Input supply current
V
IS
= 5 V
650
μ
A
General controller for driving
lamps
motors
solenoids
heaters
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Vertical power DMOS output
stage
Low on-state resistance
Overload protection against
over temperature
Overload protection against
short circuit load
Latched overload protection
reset by input
5 V logic compatible input level
Control of power MOSFET
and supply of overload
protection circuits
derived from input
Lower operating input current
permits direct drive by
micro-controller
ESD protection on input pin
Overvoltage clamping for turn
off of inductive loads
Fig.1. Elements of the TOPFET.
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
input
2
drain
3
source
mb
drain
POWER
MOSFET
DRAIN
SOURCE
INPUT
O/V
CLAMP
LOGIC AND
PROTECTION
RIG
1
3
mb
2
P
D
S
I
TOPFET
June 1996
1
Rev 1.000
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相关代理商/技术参数
参数描述
BUK110-50GL 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET
BUK110-50GL /T3 功能描述:MOSFET TAPE13 TOPFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
BUK110-50GL,118 功能描述:MOSFET TAPE13 TOPFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
BUK110-50GS 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:PowerMOS transistor TOPFET
BUK111-50GL 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Logic level TOPFET SMD version of BUK112-50GL