参数资料
型号: BUK110-50GS
厂商: NXP SEMICONDUCTORS
元件分类: JFETs
英文描述: PowerMOS transistor TOPFET
中文描述: 50 A, 50 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
文件页数: 1/11页
文件大小: 113K
代理商: BUK110-50GS
Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET
BUK110-50GS
DESCRIPTION
QUICK REFERENCE DATA
Monolithic temperature and
overload protected power MOSFET
in a 3 pin plastic surface mount
envelope, intended as a general
purpose switch for automotive
systems and other applications.
SYMBOL
PARAMETER
MAX.
UNIT
V
DS
I
D
P
D
T
j
R
DS(ON)
Continuous drain source voltage
Continuous drain current
Total power dissipation
Continuous junction temperature
Drain-source on-state resistance
50
50
125
150
28
V
A
W
C
m
APPLICATIONS
V
IS
= 10 V
General controller for driving
lamps
motors
solenoids
heaters
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Vertical power DMOS output
stage
Low on-state resistance
Overload protection against
over temperature
Overload protection against
short circuit load
Latched overload protection
reset by input
10 V input level
Low threshold voltage
also allows 5 V control
Control of power MOSFET
and supply of overload
protection circuits
derived from input
ESD protection on input pin
Overvoltage clamping for turn
off of inductive loads
Fig.1. Elements of the TOPFET.
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
input
2
drain
3
source
mb
drain
POWER
MOSFET
DRAIN
SOURCE
INPUT
O/V
CLAMP
LOGIC AND
PROTECTION
RIG
1
3
mb
2
P
D
S
I
TOPFET
June 1996
1
Rev 1.000
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