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参数资料
| 型号： | BUK110-50GS |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | JFETs |
| 英文描述： | PowerMOS transistor TOPFET |
| 中文描述： | 50 A, 50 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 6/11页 |
| 文件大小： | 113K |
| 代理商： | BUK110-50GS |
Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET
BUK110-50GS
Fig.8. Typical on-state resistance, T
= 25 C.
R
DS(ON)
= f(I
D
); parameter V
IS
; t
p
= 250
μ
s
Fig.9. Typical transfer characteristics, T
= 25 C.
I
D
= f(V
IS
) ; conditions: V
DS
= 10 V; t
p
= 250
μ
s
Fig.10. Typical transconductance, T
= 25 C.
g
fs
= f(I
D
); conditions: V
DS
= 10 V; t
p
= 250
μ
s
Fig.11. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)
25 C = f(T
j
); I
D
= 25 A; V
IS
= 10 V
Fig.12. Typical overload protection characteristics.
t
d sc
= f(P
DS
); conditions: V
IS
≥
5 V; T
j
= 25 C.
Fig.13. Normalised limiting overload dissipation.
P
DSM
% =100
P
DSM
/P
DSM
(25 C) = f(T
mb
)
0
20
40
60
80
ID / A
100
120
140
160
BUK110-50GS
RDSON / Ohm
0.06
0.05
0.04
0.03
0.02
0.01
0
VIS / V =
5
6
7
8
10
9
-60
-40
-20
0
20
40
Tj / C
60
80
100 120 140
a
Normalised RDS(ON) = f(Tj)
1.5
1.0
0.5
0
0
2
4
6
8
10
12
BUK110-50GS
VIS / V
ID / A
160
140
120
100
80
60
40
20
0
0.1
1
10
PDS / kW
BUK110-50GS
10
1
0.1
td sc / ms
PDSM
0
100
150
BUK110-50GS
ID / A
gfs / S
30
20
10
0
50
-60
-40
-20
0
20
40
Tmb / C
60
80
100
120
140
PDSM%
120
100
80
60
40
20
0
June 1996
6
Rev 1.000
相关PDF资料 |
PDF描述 |
|---|---|
| BUK214-50Y | POWERLINE: RP20-S_D_TE - 2:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 86% |
| BUK224-50Y | TOPFET high side switch |
| BUK436-200A | POWERLINE: RP20-S_D_TE - 2:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 86% |
| BUK436-200B | POWERLINE: RP20-S_DEW - 4:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 84% |
| BUK445-200A | PowerMOS transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BUK111-50GL | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Logic level TOPFET SMD version of BUK112-50GL |
| BUK112-50GL | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK113-50DL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:N-Channel Enhancement MOSFET |
| BUK114-50L | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Logic level TOPFET |
| BUK114-50L /T3 | 功能描述:MOSFET TAPE13 TOPFET2 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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