- 您现在的位置：买卖IC网 > PDF目录373031 > BUK110-50GS (NXP SEMICONDUCTORS) PowerMOS transistor TOPFET PDF资料下载
参数资料
| 型号： | BUK110-50GS |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | JFETs |
| 英文描述： | PowerMOS transistor TOPFET |
| 中文描述： | 50 A, 50 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 7/11页 |
| 文件大小： | 113K |
| 代理商： | BUK110-50GS |
Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET
BUK110-50GS
Fig.14. Typical overload protection characteristics.
Conditions: V
DD
= 13 V; V
IS
= 10 V; SC load = 30 m
Fig.15. Typical clamping characteristics, 25 C.
I
D
= f(V
DS
); conditions: V
IS
= 0 V; t
p
≤
50
μ
s
Fig.16. Input threshold voltage.
V
IS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= 5 V
Fig.17. Typical DC input characteristics, T
j
= 25 C.
I
IS
= f(V
IS
); normal operation
Fig.18. Typical DC input characteristics, T
j
= 25 C.
I
ISL
= f(V
IS
); overload protection operated
I
D
= 0 A
Fig.19. Typical reverse diode current, T
= 25 C.
I
S
= f(V
SDS
); conditions: V
IS
= 0 V; t
p
= 250
μ
s
-60
-20
20
60
100
140
180
220
Tmb / C
BUK110-50GS
1.5
1.0
0.5
0
Energy & Time
Time / ms
Energy / J
Tj(TO)
0
2
4
6
8
10
12
14
BUK110-50GS
VIS / V
IIS / mA
2.0
1.5
1.0
0.5
0
50
60
70
VDS / V
ID / A
BUK110-50GS
50
40
30
20
10
0
typ.
BUK110-50GS
0
2
4
6
8
10
12
14
0
2
4
6
8
10
VIS / V
IIS / mA
RESET
PROTECTION LATCHED
NORMAL
-60
-40
-20
0
20
40
Tj / C
60
80
100
120
140
VIS(TO) / V
2
1
0
max.
typ.
min.
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
BUK110-50GS
VSD / V
IS / A
200
150
100
50
0
June 1996
7
Rev 1.000
相关PDF资料 |
PDF描述 |
|---|---|
| BUK214-50Y | POWERLINE: RP20-S_D_TE - 2:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 86% |
| BUK224-50Y | TOPFET high side switch |
| BUK436-200A | POWERLINE: RP20-S_D_TE - 2:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 86% |
| BUK436-200B | POWERLINE: RP20-S_DEW - 4:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 84% |
| BUK445-200A | PowerMOS transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BUK111-50GL | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Logic level TOPFET SMD version of BUK112-50GL |
| BUK112-50GL | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK113-50DL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:N-Channel Enhancement MOSFET |
| BUK114-50L | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Logic level TOPFET |
| BUK114-50L /T3 | 功能描述:MOSFET TAPE13 TOPFET2 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。