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参数资料
| 型号： | BUK110-50GS |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | JFETs |
| 英文描述： | PowerMOS transistor TOPFET |
| 中文描述： | 50 A, 50 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 5/11页 |
| 文件大小： | 113K |
| 代理商： | BUK110-50GS |
Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET
BUK110-50GS
Fig.2. Normalised limiting power dissipation.
P
D
% = 100
P
D
/P
D
(25 C) = f(T
mb
)
Fig.3. Normalised continuous drain current.
I
D
% = 100
I
D
/I
D
(25 C) = f(T
mb
); conditions: V
IS
= 5 V
Fig.4. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.5. Transient thermal impedance.
Z
th
j-mb
= f(t); parameter D = t
p
/T
Fig.6. Typical output characteristics, T
= 25 C.
ID = f(V
DS
); parameter V
IS
; t
p
= 250
μ
s & t
p
< t
d sc
Fig.7. Typical on-state characteristics, T
j
= 25 C.
ID = f(V
DS
); parameter V
IS
; t
p
= 250
μ
s
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
BUK110-50GS
1E-07
1E-05
1E-03
t / s
1E-01
1E+01
Zth / (K/W)
10
1
0.1
0.01
0.001
0
0.5
0.2
0.1
0.05
0.02
D =
D =
t
p
t
p
T
T
P
D
t
0
20
40
60
80
100
120
140
Tmb / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0
4
8
12
16
20
24
28
32
BUK110-50GS
VDS / V
ID / A
180
160
140
120
100
80
60
40
20
0
8
9
11
10
7
6
5
4
3
VIS / V =
1
100
VDS / V
1000
100
10
1
BUK110-50GS
10
ID & IDM / A
Overload protection characteristics not shown
DC
100 us
1 ms
10 ms
100 ms
10 us
tp =
RDS(ON)=VDSID
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
BUK110-50GS
10
9
VDS / V
ID / A
80
70
60
50
40
30
20
10
0
3
4
5
6
8
7
VIS / V =
June 1996
5
Rev 1.000
相关PDF资料 |
PDF描述 |
|---|---|
| BUK214-50Y | POWERLINE: RP20-S_D_TE - 2:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 86% |
| BUK224-50Y | TOPFET high side switch |
| BUK436-200A | POWERLINE: RP20-S_D_TE - 2:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 86% |
| BUK436-200B | POWERLINE: RP20-S_DEW - 4:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 84% |
| BUK445-200A | PowerMOS transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BUK111-50GL | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Logic level TOPFET SMD version of BUK112-50GL |
| BUK112-50GL | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK113-50DL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:N-Channel Enhancement MOSFET |
| BUK114-50L | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Logic level TOPFET |
| BUK114-50L /T3 | 功能描述:MOSFET TAPE13 TOPFET2 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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