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参数资料
| 型号： | BUK110-50DL |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | JFETs |
| 英文描述： | PowerMOS transistor Logic level TOPFET |
| 中文描述： | 45 A, 50 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 7/10页 |
| 文件大小： | 90K |
| 代理商： | BUK110-50DL |
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK110-50DL
Fig.14. Typical DC input characteristics, T
= 25 C.
I
ISL
& I
IS
= f(V
IS
); protection latched & normal operation
Fig.15. Typical reverse diode current, T
= 25 C.
I
S
= f(V
SDS
); conditions: V
IS
= 0 V; t
p
= 250
μ
s
Fig.16. Test circuit for resistive load switching times.
Fig.17. Typical switching waveforms, resistive load.
V
DD
= 13 V; R
L
= 1.1
; R
I
= 50
, T
j
= 25 C.
Fig.18. Normalised limiting clamping energy.
E
DSM
% = f(T
mb
); conditions: I
D
= 25 A; V
IS
= 10 V
Fig.19. Clamping energy test circuit, R
IS
= 50
.
E
DSM
=
0.5
LI
D
0
2
4
6
VIS / V
IISL & IIS / uA
BUK110-50DL
600
500
400
300
200
100
0
RESET
PROTECTION LATCHED
NORMAL
IISL
IIS
0
200
400
600
800
1000
time / us
VIS / V & VDS / V
BUK110-50DL
15
10
5
0
VIS
VDS
0
20
40
60
80
100
120
140
Tmb / C
EDSM%
120
110
100
90
80
70
60
50
40
30
20
10
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
BUK110-50DL
VSD / V
IS / A
200
150
100
50
0
L
D.U.T.
VDD
RIS
R 01
shunt
VDS
-ID/100
+
-
VIS
0
P
D
S
I
TOPFET
ID
0
VDS
0
VDD
V(CL)DSS
Schottky
VDD
D.U.T.
R
0V
0R1
I
VIS
ID measure
D
S
I
TOPFET
P
RL
2
V
(
CL
)
DSS
/(
V
(
CL
)
DSS
V
DD
)
June 1996
7
Rev 1.000
相关PDF资料 |
PDF描述 |
|---|---|
| BUK110-50GL | PowerMOS transistor Logic level TOPFET |
| BUK110-50GS | PowerMOS transistor TOPFET |
| BUK214-50Y | POWERLINE: RP20-S_D_TE - 2:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 86% |
| BUK224-50Y | TOPFET high side switch |
| BUK436-200A | POWERLINE: RP20-S_D_TE - 2:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 86% |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BUK110-50GL | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK110-50GL /T3 | 功能描述:MOSFET TAPE13 TOPFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| BUK110-50GL,118 | 功能描述:MOSFET TAPE13 TOPFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| BUK110-50GS | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:PowerMOS transistor TOPFET |
| BUK111-50GL | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Logic level TOPFET SMD version of BUK112-50GL |
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