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参数资料
| 型号： | BU4523DX |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 功率晶体管 |
| 英文描述： | High Current Inductor; Inductor Type:High Frequency; Inductance:0.68uH; Inductance Tolerance:+/- 20 %; Current Rating:34A; Series:IHLP-5050EZ; Package/Case:5050EZ; Leaded Process Compatible:Yes; Mounting Type:Surface Mount RoHS Compliant: Yes |
| 中文描述： | 11 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 封装： | PLASTIC, SOT-399, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 23K |
| 代理商： | BU4523DX |
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4523DX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope
with an integrated damper diode intended for use in horizontal deflection circuits of colour television receivers and
p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very
low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
8
6.5
-
0.3
t.b.f
MAX.
1500
800
11
29
45
3.0
-
-
2.2
0.4
t.b.f
UNIT
V
V
A
A
W
V
A
A
V
μ
s
μ
s
T
hs
≤
25 C
I
= 8 A; I
B
= 2 A
f = 16 kHz
f = 70 kHz
I
F
= 8 A
I
= 8 A; f = 16 kHz
f = 70 kHz
V
F
t
f
Diode forward voltage
Fall time
PINNING - SOT399
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector-emitter voltage peak value
V
CEO
Collector-emitter voltage (open base)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
-I
BM
Reverse base current peak value
1
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
11
29
7
10
7
45
150
150
UNIT
V
V
A
A
A
A
A
W
C
C
T
hs
≤
25 C
case
1 2 3
b
c
e
Rbe
1
Turn-off current.
July 1998
1
Rev 1.000
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相关代理商/技术参数 |
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| BU4525AF | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4525AL | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4525AW | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
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