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参数资料
| 型号： | BU4523DX |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 功率晶体管 |
| 英文描述： | High Current Inductor; Inductor Type:High Frequency; Inductance:0.68uH; Inductance Tolerance:+/- 20 %; Current Rating:34A; Series:IHLP-5050EZ; Package/Case:5050EZ; Leaded Process Compatible:Yes; Mounting Type:Surface Mount RoHS Compliant: Yes |
| 中文描述： | 11 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 封装： | PLASTIC, SOT-399, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 23K |
| 代理商： | BU4523DX |
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4523DX
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
TYP.
-
35
MAX.
2.8
-
UNIT
K/W
K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
Repetitive peak voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
R.H.
≤
65 % ; clean and dustfree
MIN.
-
TYP.
-
MAX.
2500
UNIT
V
-
22
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
2
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
I
B
= 600 mA
V
= 7.5 V
I
= 0 A; I
C
= 100 mA;
L = 25 mH
I
C
= 8 A; I
B
= 2 A
I
C
= 8 A; I
B
= 2 A
I
C
= 1 A; V
CE
= 5 V
I
C
= 8 A; V
CE
= 5 V
I
F
= 8 A
MIN.
-
-
TYP.
-
-
MAX.
1.0
2.0
UNIT
mA
mA
BV
EBO
R
be
V
CEOsust
Emitter-base breakdown voltage
Base-emitter resistance
Collector-emitter sustaining voltage
7.5
-
800
12.5
46
-
-
-
-
V
V
V
CEsat
V
BEsat
h
FE
h
FE
V
F
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
-
-
3.0
1.1
V
V
0.85
0.95
t.b.f
5.8
-
4.2
-
7.3
2.2
Diode forward voltage
V
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
Switching times (16 kHz line
deflection circuit)
t
s
Turn-off storage time
t
f
Turn-off fall time
Switching times (70 kHz line
deflection circuit)
t
s
Turn-off storage time
t
f
Turn-off fall time
CONDITIONS
I
Csat
= 8.0 A;I
B1
= 1.6 A
(I
B2
= -4.0 A)
TYP.
MAX.
UNIT
4.5
0.30
5.5
0.40
μ
s
μ
s
I
Csat
= t.b.f
t.b.f
t.b.f
t.b.f
t.b.f
μ
s
μ
s
2
Measured with half sine-wave voltage (curve tracer).
July 1998
2
Rev 1.000
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相关代理商/技术参数 |
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|---|---|
| BU4525AF | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4525AL | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4525AW | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
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