参数资料
型号: BU4522DX
厂商: NXP SEMICONDUCTORS
元件分类: 功率晶体管
英文描述: Silicon Diffused Power Transistor
中文描述: 10 A, 800 V, NPN, Si, POWER TRANSISTOR
封装: PLASTIC, SOT-399, 3 PIN
文件页数: 3/4页
文件大小: 23K
代理商: BU4522DX
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4522DX
MECHANICAL DATA
Dimensions in mm
Net Mass: 5.88 g
Fig.1. SOT399; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
4.5
16.0 max
0.7
10.0
5.1
27
max
18.1
min
4.5
2.2 max
1.1
0.4 M
5.45
5.45
25
25.1
25.7
3.0
5.8 max
3.3
0.95 max
2
3.3
22.5
max
July 1998
3
Rev 1.000
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BU4523AF 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor
BU4523AW 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor
BU4523AX 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor
BU4523DF 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor
BU4523DW 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor