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参数资料
| 型号： | BUK110-50GL |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 外设及接口 |
| 英文描述： | PowerMOS transistor Logic level TOPFET |
| 中文描述： | BUF OR INV BASED PRPHL DRVR, PSSO3 |
| 封装： | SOT404, 3 PIN |
| 文件页数： | 4/11页 |
| 文件大小： | 109K |
| 代理商： | BUK110-50GL |
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK110-50GL
TRANSFER CHARACTERISTICS
T
mb
= 25 C
SYMBOL
PARAMETER
g
fs
Forward transconductance
CONDITIONS
V
DS
= 10 V; I
DM
= 25 A t
p
≤
300
μ
s;
δ
0.01
V
DS
= 13 V; V
IS
= 5 V
MIN.
17
TYP.
28
MAX.
-
UNIT
S
I
D(SC)
Drain current
1
-
60
-
A
SWITCHING CHARACTERISTICS
T
mb
= 25 C. R
I
= 50
. Refer to waveform figures and test circuits.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
t
d on
t
r
t
d off
t
f
t
d on
t
r
t
d off
t
f
Turn-on delay time
V
DD
= 13 V; V
IS
= 5 V
resistive load R
L
= 1.1
V
DD
= 13 V; V
IS
= 0 V
resistive load R
L
= 1.1
V
DD
= 13 V; V
IS
= 5 V
inductive load I
DM
= 11 A
V
DD
= 13 V; V
IS
= 0 V
inductive load I
DM
= 11 A
-
2
-
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
Rise time
-
8
-
Turn-off delay time
-
8
-
Fall time
-
8
-
Turn-on delay time
-
3.7
-
Rise time
-
3.7
-
Turn-off delay time
-
13
-
Fall time
-
1.4
-
REVERSE DIODE LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
S
Continuous forward current
T
mb
≤
25 C; V
IS
= 0 V
-
50
A
REVERSE DIODE CHARACTERISTICS
T
mb
= 25 C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
SDS
t
rr
Forward voltage
I
S
= 50 A; V
IS
= 0 V; t
p
= 300
μ
s
not applicable
2
-
1.0
1.5
V
Reverse recovery time
-
-
-
-
ENVELOPE CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
L
d
Internal drain inductance
Measured from upper edge of tab
to centre of die
Measured from source lead
soldering point to source bond pad
-
2.5
-
nH
L
s
Internal source inductance
-
7.5
-
nH
1
During overload before short circuit load protection operates.
2
The reverse diode of this type is not intended for applications requiring fast reverse recovery.
June 1996
4
Rev 1.000
相关PDF资料 |
PDF描述 |
|---|---|
| BUK110-50GS | PowerMOS transistor TOPFET |
| BUK214-50Y | POWERLINE: RP20-S_D_TE - 2:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 86% |
| BUK224-50Y | TOPFET high side switch |
| BUK436-200A | POWERLINE: RP20-S_D_TE - 2:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 86% |
| BUK436-200B | POWERLINE: RP20-S_DEW - 4:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 84% |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BUK110-50GL /T3 | 功能描述:MOSFET TAPE13 TOPFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| BUK110-50GL,118 | 功能描述:MOSFET TAPE13 TOPFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| BUK110-50GS | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:PowerMOS transistor TOPFET |
| BUK111-50GL | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Logic level TOPFET SMD version of BUK112-50GL |
| BUK112-50GL | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
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