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参数资料
| 型号： | BUK7105-40ATE |
| 英文描述： | TrenchPLUS standard level FET |
| 中文描述： | TrenchPLUS标准电平场效应管 |
| 文件页数： | 10/16页 |
| 文件大小： | 341K |
| 代理商： | BUK7105-40ATE |
Philips Semiconductors
BUK71/7905-40ATE
TrenchPLUS standard level FET
Product data
Rev. 01 — 20 August 2003
3 of 16
9397 750 11694
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
VGS ≥ 10 V
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Continuous drain current as a function of
mounting base temperature.
Tmb =25 °C; IDM single pulse.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03na19
0
40
80
120
0
50
100
150
200
Tmb
(°C)
Pder
(%)
03ng16
0
40
80
120
160
0
50
100
150
200
Tmb (C)
ID
(A)
Capped at 75A due to package
P
der
P
tot
P
tot 25 C
°
()
-----------------------
100%
×
=
03ng17
1
10
102
103
1
10
102
VDS (V)
ID
(A)
DC
100 ms
10 ms
Limit RDSon = VDS/ID
1 ms
tp = 10 s
100 s
Capped at 75 A due to package
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BUK7105-40ATE /T3 | 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| BUK7105-40ATE,118 | 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| BUK7107-40ATC | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:N-channel TrenchPLUS standard level FET |
| BUK7107-40ATC /T3 | 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| BUK7107-40ATC,118 | 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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