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参数资料
| 型号： | BUK7109-75ATE |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 70V V(BR)DSS | 75A I(D) | SOT-426 |
| 中文描述： | 晶体管 | MOSFET | N-CHANNEL | 70V V(BR)DSS | 75A I(D) | SOT-426封装 |
| 文件页数： | 1/16页 |
| 文件大小： | 341K |
| 代理商： | BUK7109-75ATE |
BUK71/7905-40ATE
TrenchPLUS standard level FET
Rev. 01 — 20 August 2003
Product data
1.
Product prole
1.1 Description
N-channel enhancement mode eld-effect power transistor in a plastic package using
TrenchMOS technology, featuring both very low on-state resistance and
TrenchPLUS diodes for temperature sensing and ESD protection.
Product availability:
BUK7105-40ATE in SOT426 (D2-PAK)
BUK7905-40ATE in SOT263B (TO-220).
1.2 Features
1.3 Applications
1.4 Quick reference data
2.
Pinning information
s Integrated temperature sensor
s Q101 compliant
s Electrostatic discharge protection
s Standard level compatible.
s Variable Valve Timing for engines
s Electrical Power Assisted Steering.
s VDS ≤ 40 V
s VF = 658 mV (typ)
s RDSon = 4.5 m (typ)
s SF = 1.54 mV/K (typ).
Table 1:
Pinning - SOT426 and SOT263B, simplied outline and symbol
Pin
Description
Simplied outline
Symbol
1
gate (g)
SOT426 (D2-PAK)
SOT263B (TO-220)
2
anode (a)
3
drain (d)
4
cathode (k)
5
source (s)
mb
mounting base;
connected to drain (d)
Front view
MBK127
12
4
35
mb
15
mb
MBL263
MBL317
d
s
g
a
k
相关PDF资料 |
PDF描述 |
|---|---|
| BUK7909-75AIE | TRANSISTOR | MOSFET | N-CHANNEL | 70V V(BR)DSS | 75A I(D) | TO-220VAR |
| BUK7909-75ATE | TRANSISTOR | MOSFET | N-CHANNEL | 70V V(BR)DSS | 75A I(D) | SOT-263B |
| BUK793-60A | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | SOT-263 |
| BUK795-60A | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 38A I(D) | SOT-263 |
| BUK9107-40ATC | TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 75A I(D) | SOT-426 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BUK7109-75ATE /T3 | 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| BUK7109-75ATE,118 | 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| BUK714R1-40BT | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:TrenchMOS standard level FET |
| BUK714R1-40BT /T3 | 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| BUK714R1-40BT,118 | 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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