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参数资料
| 型号： | BUK7109-75ATE |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 70V V(BR)DSS | 75A I(D) | SOT-426 |
| 中文描述： | 晶体管 | MOSFET | N-CHANNEL | 70V V(BR)DSS | 75A I(D) | SOT-426封装 |
| 文件页数： | 12/16页 |
| 文件大小： | 341K |
| 代理商： | BUK7109-75ATE |
Philips Semiconductors
BUK71/7905-40ATE
TrenchPLUS standard level FET
Product data
Rev. 01 — 20 August 2003
5 of 16
9397 750 11694
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
5.
Characteristics
Table 4:
Characteristics
Tj =25 °C unless otherwise specied.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C40
-
V
Tj = 55 °C36
-
V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS =VGS;
Tj =25 °C2
3
4
V
Tj = 175 °C1
-
V
Tj = 55 °C
-
4.4
V
IDSS
drain-source leakage current
VDS = 40 V; VGS =0V
Tj =25 °C
-
0.1
10
A
Tj = 175 °C
-
250
A
V(BR)GSS
gate-source breakdown
voltage
IG = ±1 mA;
55 °C<Tj < 175 °C
20
22
-
V
IGSS
gate-source leakage current
VGS = ±10 V; VDS =0V
Tj =25 °C
-
22
1000
nA
Tj = 175 °C-
-
10
A
RDSon
drain-source on-state
resistance
VGS =10V; ID =50A;
Tj =25 °C
-
4.5
5
m
Tj = 175 °C
-
9.5
m
VF
forward voltage, temperature
sense diode
IF = 250 A
648
658
668
mV
SF
temperature coefcient
temperature sense diode
IF = 250 A;
55 °C<Tj < 175 °C
1.4
1.54
1.68
mV/K
Vhys
temperature sense diode
forward voltage hysteresis
125
A<IF < 250 A
253250mV
Dynamic characteristics
Qg(tot)
total gate charge
VGS = 10V; VDS =32V;
-
118
-
nC
Qgs
gate-source charge
-
16
-
nC
Qgd
gate-drain (Miller) charge
-
57
-
nC
Ciss
input capacitance
VGS =0V; VDS =25V;
f = 1 MHz; Figure 12
-4500
-pF
Coss
output capacitance
-
1500
-
pF
Crss
reverse transfer capacitance
-
960
-
pF
td(on)
turn-on delay time
VDS = 30 V; RL = 1.2 ;
VGS =10V; RG =10
-35
-
nS
tr
rise time
-
115
-
nS
td(off)
turn-off delay time
-
155
-
nS
tf
fall time
-
110
-
nS
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BUK7109-75ATE /T3 | 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| BUK7109-75ATE,118 | 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| BUK714R1-40BT | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:TrenchMOS standard level FET |
| BUK714R1-40BT /T3 | 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| BUK714R1-40BT,118 | 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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