参数资料
型号: BUK7909-75ATE
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 70V V(BR)DSS | 75A I(D) | SOT-263B
中文描述: 晶体管| MOSFET的| N沟道| 70V的五(巴西)直| 75A条(丁)|的SOT - 263B
文件页数: 4/16页
文件大小: 341K
代理商: BUK7909-75ATE
Philips Semiconductors
BUK71/7905-40ATE
TrenchPLUS standard level FET
Product data
Rev. 01 — 20 August 2003
12 of 16
9397 750 11694
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Fig 19. SOT263B (TO-220).
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT263B
5-lead TO-220
D
D1
q
p
p1
L
15
L1
mounting
base
L2
m
e
Q
b
0
5
10 mm
scale
Plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead TO-220
SOT263B
DIMENSIONS (mm are the original dimensions)
A
E
A1
c
Notes
1. Terminal dimensions are uncontrolled in this zone.
2. Positional accuracy of the terminals is controlled in this zone.
w M
UNIT
A1
D1
e
p1
mm
1.7
qQ
A
b
D
c
L2
(2)
0.5
4.3
4.1
p
3.8
3.6
m
0.8
0.6
15.0
13.5
2.4
1.6
3.0
2.7
2.6
2.2
w
0.4
0.7
0.4
15.8
15.2
0.85
0.70
4.5
4.1
1.39
1.27
6.4
5.9
10.3
9.7
L1
(1)
E
L
01-01-11
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BUK7909-75ATE,127 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
BUK793-60A 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | SOT-263
BUK794R1-40BT 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
BUK794R1-40BT,127 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
BUK795-60A 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 38A I(D) | SOT-263