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参数资料
| 型号： | BYT51M |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 1 A, 1000 V, SILICON, SIGNAL DIODE |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件页数： | 1/4页 |
| 文件大小： | 108K |
| 代理商： | BYT51M |
Document Number: 86028
For technical questions within your region, please contact one of the following:
www.vishay.com
Rev. 1.8, 25-Aug-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
153
Standard Avalanche Sinterglass Diode
BYT51A, BYT51B, BYT51D, BYT51G, BYT51J, BYT51K, BYT51M
Vishay Semiconductors
MECHANICAL DATA
Case: SOD-57
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
FEATURES
Glass passivated junction
Hermetically sealed package
Low reverse current
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
definition
APPLICATIONS
Rectification diode
949539
PARTS TABLE
PART
TYPE DIFFERENTIATION
PACKAGE
BYT51A
VR = 50 V; IFAV = 1.5 A
SOD-57
BYT51B
VR = 100 V; IFAV = 1.5 A
SOD-57
BYT51D
VR = 200 V; IFAV = 1.5 A
SOD-57
BYT51G
VR = 400 V; IFAV = 1.5 A
SOD-57
BYT51J
VR = 600 V; IFAV = 1.5 A
SOD-57
BYT51K
VR = 800 V; IFAV = 1.5 A
SOD-57
BYT51M
VR = 1000 V; IFAV = 1.5 A
SOD-57
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
Reverse voltage = repetitive peak
reverse voltage
See electrical characteristics
BYT51A
VR = VRRM
50
V
BYT51B
VR = VRRM
100
V
BYT51D
VR = VRRM
200
V
BYT51G
VR = VRRM
400
V
BYT51J
VR = VRRM
600
V
BYT51K
VR = VRRM
800
V
BYT51M
VR = VRRM
1000
V
Peak forward surge current
tp = 10 ms, half sine wave
IFSM
50
A
Repetitive peak forward current
IFRM
9A
Average forward current
On PC board
IFAV
1A
l = 10mm
IFAV
1.5
A
Junction and storage temperature
range
Tj = Tstg
- 55 to + 175
°C
Non repetitive reverse avalanche
energy
l(BR)R = 1 A
ER
20
mJ
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| BYT52A | 0.85 A, 50 V, SILICON, SIGNAL DIODE |
| BYT52D | 0.85 A, 200 V, SILICON, SIGNAL DIODE |
| BYT85-800 | 4 A, 800 V, SILICON, RECTIFIER DIODE, TO-220AC |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BYT51M-TAP | 功能描述:整流器 1.5 Amp 1000 Volt 50 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| BYT51M-TR | 功能描述:整流器 1.5 Amp 1000 Volt 50 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| BYT52 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Fast Silicon Mesa Rectifiers |
| BYT52A | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Fast Silicon Mesa Rectifiers |
| BYT52A_10 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Fast Avalanche Sinterglass Diode |
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