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参数资料
| 型号： | BYT51M |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 1 A, 1000 V, SILICON, SIGNAL DIODE |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件页数： | 2/4页 |
| 文件大小： | 108K |
| 代理商： | BYT51M |
www.vishay.com
For technical questions within your region, please contact one of the following:
Document Number: 86028
154
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Rev. 1.8, 25-Aug-10
BYT51A, BYT51B, BYT51D, BYT51G, BYT51J, BYT51K, BYT51M
Vishay Semiconductors
Standard Avalanche Sinterglass
Diode
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Typ. Thermal Resistance vs. Lead Length
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 3 - Max. Average Forward Current vs.
Ambient Temperature
Fig. 4 - Reverse Current vs. Junction Temperature
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Junction ambient
Lead length l = 10 mm, TL = constant
RthJA
45
K/W
On PC board with spacing 25 mm
RthJA
100
K/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX
UNIT
Forward voltage
IF = 1 A
VF
-0.95
1.1
V
IF = 1 A, Tj = 175 °C
VF
--
1
V
Reverse current
VR = VRRM
IR
--
1
μA
VR = VRRM, Tj = 150 °C
IR
-
100
μA
Reverse recovery time
IF = 0.5 A, IR = 1 A, iR = 0.25 A
trr
--
4
μs
0
20
40
80
60
100
120
15
10
5
0
202530
R
thJA
-
Ther.
Re
s
is
t.
Junction/Ambient
(K/W)
l - Lead Length (mm)
949101
ll
T
L = constant
0.001
0.01
0.1
1
10
0
0.4
0.8
1.2
1.6
2.0
16323
VF - Forward Voltage (V)
I F
-
Forward
Current
(A)
T
j = 175 °C
T
j = 25 °C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100 120 140 160 180
16324
Tamb - Ambient Temperature (°C)
I FAV
-
Average
Forward
Current
(A)
R
thJA = 45 K/W
l = 10 mm
R
thJA = 100 K/W
PCB: d = 25 mm
1
10
100
1000
25
50
75
100
125
150
175
16325
Tj - Junction Temperature (°C)
I R
-
Rever
s
e
Current
(μA)
V
R = VRRM
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|---|---|
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| BYT52D | 0.85 A, 200 V, SILICON, SIGNAL DIODE |
| BYT85-800 | 4 A, 800 V, SILICON, RECTIFIER DIODE, TO-220AC |
| BYV32-150 | 18 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BYT51M-TAP | 功能描述:整流器 1.5 Amp 1000 Volt 50 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| BYT51M-TR | 功能描述:整流器 1.5 Amp 1000 Volt 50 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| BYT52 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Fast Silicon Mesa Rectifiers |
| BYT52A | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Fast Silicon Mesa Rectifiers |
| BYT52A_10 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Fast Avalanche Sinterglass Diode |
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