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| 型号： | BZB100A,115 |
| 厂商： | NXP Semiconductors |
| 文件页数： | 5/10页 |
| 文件大小： | 0K |
| 描述： | DIODE ZENER 300MW 105V SC-76 |
| 标准包装： | 1 |
| 电压 - 反向隔离（标准值）： | 76V |
| 电压 - 击穿： | 95V |
| 电极标记： | 双向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-76，SOD-323 |
| 供应商设备封装： | SOD-323 |
| 包装： | 标准包装 |
| 其它名称： | 568-7022-6 |
NXP Semiconductors
BZB100A
Bidirectional Zener diode
I Z
10 ? 2
006aab045
(A)
10 ? 3
10 ? 4
10 ? 5
10 ? 6
10 ? 7
10 ? 8
10 ? 9
80
90
100
110
120
V Z (V)
T j = 25 ° C
Fig 4.
Working current as a function of working voltage; typical values
8. Application information
High-voltage Zener diodes can be used as overvoltage protection diodes for Integrated
Circuits (IC) due to their ability to cut off the applied voltage at a well-de?ned value. One
important application is the protection of EL driver circuits where a driver IC is connected
to an EL foil. Since both the foil as well as the IC are sensitive against voltage overstress,
it is necessary to install an additional protection device in the circuit. Commonly, a
peak-to-peak voltage of 220 V should not be exceeded, such that two 100 V diodes in
bidirectional con?guration are used.
CHF
CLF
CHF
CLF
1
2
10
9
V+
L+
V BAT
ENABLE
Renable
E
3
DRIVER IC 8
VO
L
n.c.
GND
4
5
7
6
L ?
n.c.
BZB100A
EL LAMP
006aab046
BZB100A_2
Fig 5.
Application diagram
? NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 24 June 2008
5 of 10
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| BZB784-C10 T/R | 功能描述:稳压二极管 DIODE ZENER 5 PCT TAPE-7 RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
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