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参数资料
| 型号： | C62702-C748 |
| 厂商： | SIEMENS AG |
| 英文描述： | PNP Silicon AF Transistor (High current gain High collector current Low collector-emitter saturation voltage) |
| 中文描述： | 自动对焦进步党硅晶体管（高电流增益高集电极电流低集电极发射极饱和电压） |
| 文件页数： | 2/4页 |
| 文件大小： | 126K |
| 代理商： | C62702-C748 |
Semiconductor Group
2
BC 369
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Base-emitter voltage
1)
I
C
= 5 mA;
V
CE
= 10 V
I
C
= 1 A;
V
CE
= 1 V
V
BE
–
–
0.6
–
–
1
V
Collector-emitter breakdown voltage
I
C
= 30 mA
Collector-base breakdown voltage
I
C
= 10
μ
A
Emitter-base breakdown voltage
I
E
= 1
μ
A
Collector cutoff current
V
CB
= 25 V
V
CB
= 25 V,
T
A
= 150 C
Emitter cutoff current
V
EB
= 5 V
V
(BR)CE0
20
–
–
V
(BR)CB0
25
–
–
–
DC current gain
I
C
= 5 mA;
V
CE
= 10 V
I
C
= 500 mA;
V
CE
= 1 V
1)
I
C
= 1 A;
V
CE
= 1 V
1)
Collector-emitter saturation voltage
1)
I
C
= 1 A;
I
B
= 100 mA
h
FE
50
85
60
–
–
160
–
–
–
375
–
0.5
MHz
Transition frequency
I
C
= 100 mA,
V
CE
= 5 V,
f
= 20 MHz
f
T
–
100
–
Unit
Values
typ.
Parameter
Symbol
min.
max.
DC characteristics
AC characteristics
V
(BR)EB0
5
–
–
nA
μ
A
nA
I
CB0
–
–
–
–
–
–
100
10
100
I
EB0
V
V
CEsat
1)
Pulse test:
t
≤
300
μ
s,
D
≤
2 %.
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相关代理商/技术参数 |
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|---|---|
| C62702-C853 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:NPN Silicon Darlington Transistors (High current gain Low collector-emitter saturation voltage |
| C62702-C854 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:NPN Silicon Darlington Transistors (High current gain Low collector-emitter saturation voltage |
| C62702-C855 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:NPN Silicon Darlington Transistors (High current gain Low collector-emitter saturation voltage |
| C62702-C941 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:PNP Silicon Darlington Transistors (High current gain High collector current) |
| C62702-C942 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:PNP Silicon Darlington Transistors (High current gain High collector current) |
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