- 您现在的位置：买卖IC网 > PDF目录378433 > C62702-C854 (SIEMENS AG) NPN Silicon Darlington Transistors (High current gain Low collector-emitter saturation voltage PDF资料下载
参数资料
| 型号： | C62702-C854 |
| 厂商： | SIEMENS AG |
| 英文描述： | NPN Silicon Darlington Transistors (High current gain Low collector-emitter saturation voltage |
| 中文描述： | NPN硅达林顿晶体管（高电流增益低集电极发射极饱和电压 |
| 文件页数： | 2/4页 |
| 文件大小： | 173K |
| 代理商： | C62702-C854 |
Semiconductor Group
2
BC 875
… BC 879
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
DC current gain
I
C
= 150 mA;
V
CE
= 10 V
1)
I
C
= 500 mA;
V
CE
= 10 V
1)
Collector-emitter saturation voltage
1)
I
C
= 500 mA,
I
B
= 0.5 mA
I
C
= 1 A,
I
B
= 1 mA
V
Collector-emitter breakdown voltage
I
C
= 50 mA
BC 875
BC 877
BC 879
V
(BR)CE0
45
60
80
–
–
–
–
–
–
nA
μ
A
nA
Collector cutoff current
V
CB
=
V
CBmax
V
CB
=
V
CBmax
,
T
A
= 150 C
Emitter cutoff current,
V
EB
= 4 V
I
CB0
–
–
–
–
–
–
100
20
100
Unit
Values
typ.
Parameter
Symbol
min.
max.
DC characteristics
Collector-base breakdown voltage
I
C
= 100
μ
A
BC 875
BC 877
BC 879
V
(BR)CB0
60
80
100
5
–
–
–
–
–
–
–
–
–
–
500
Emitter-base breakdown voltage,
I
E
= 100
μ
A
Collector cutoff current
V
CE
= 0.5
×
V
CEmax
V
(BR)EB0
–
h
FE
1000
2000
–
–
–
–
Base-emitter saturation voltage
1)
I
C
= 1 A;
I
B
= 1 mA
V
BEsat
–
–
2.2
I
EB0
MHz
Transition frequency
I
C
= 200 mA,
V
CE
= 5 V,
f
= 20 MHz
f
T
–
150
–
AC characteristics
V
V
CEsat
–
–
–
–
1.3
1.8
nA
I
CE0
1)
Pulse test:
t
≤
300
μ
s,
D
≤
2 %.
相关PDF资料 |
PDF描述 |
|---|---|
| C62702-C855 | NPN Silicon Darlington Transistors (High current gain Low collector-emitter saturation voltage |
| C62702-C941 | PNP Silicon Darlington Transistors (High current gain High collector current) |
| C62702-C942 | PNP Silicon Darlington Transistors (High current gain High collector current) |
| C62702-C943 | PNP Silicon Darlington Transistors (High current gain High collector current) |
| C67040-A4207-A2 | IGBT (High switching speed Very low switching losses Low tail current Latch-up free Avalanche rated) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| C62702-C855 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:NPN Silicon Darlington Transistors (High current gain Low collector-emitter saturation voltage |
| C62702-C941 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:PNP Silicon Darlington Transistors (High current gain High collector current) |
| C62702-C942 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:PNP Silicon Darlington Transistors (High current gain High collector current) |
| C62702-C943 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:PNP Silicon Darlington Transistors (High current gain High collector current) |
| C6271 | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:HIGH VOLTAGE POWER SUPPLY SOCKET ASSEMBLY WITH TRANSIMPEDANCE AMPLIFIER |
发布紧急采购，3分钟左右您将得到回复。