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参数资料
| 型号： | C67047-A4681-A003 |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Fast switching diode chip in EMCON-Technology |
| 中文描述： | 快速开关二极管芯片快恢复技术 |
| 文件页数： | 2/4页 |
| 文件大小： | 287K |
| 代理商： | C67047-A4681-A003 |
Preliminary
SIDC42D60E6
Edited by INFINEON Technologies AI PS DD HV3, L 4193M, Edition 1, 8.01.2002
Maximum Ratings
Parameter
Symbol
Condition
Value
Unit
Repetitive peak reverse voltage
Continuous forward current limited by
T
jmax
Single pulse forward current
(depending on wire bond configuration)
Maximum repetitive forward current
limited by T
jmax
Operating junction and storage
temperature
Static Electrical Characteristics
(tested on chip),
T
j=25
°
C, unless otherwise specified
V
RRM
600
V
I
F
100
I
FSM
t
P
= 10 ms sinusoidal
tbd
I
FRM
300
A
T
j
,
T
stg
-55...+150
°
C
Value
Typ.
Parameter
Symbol
Conditions
min.
max.
Unit
Reverse leakage current
I
R
V
Br
V
R
=600V
T
j
=25
°
C
27
μA
Cathode-Anode
breakdown Voltage
I
R
=4mA
T
j
=25°C
600
V
Forward voltage drop
V
F
I
F
=100A
T
j
=25
°
C
1.25
V
Dynamic Electrical Characteristics
,
at
T
j
= 25
°
C, unless otherwise specified, tested at component
Value
Parameter
Symbol
Conditions
min.
Typ.
tbd
max.
Unit
t
rr1
I
F
=100A
T
j
=25°C
Reverse recovery time
t
rr2
di/dt=4400A/
m
s
V
R
=300V
I
F
=100A
T
j
=125°C
ns
I
RRM1
T
j
=25°C
132.8
Peak recovery current
I
RRM2
di/dt=4400A/
m
s
V
R
= 300V
T
j
=125°C
157
A
Q
rr1
T
j
=25
°
C
6.8
Reverse recovery charge
Q
rr2
I
F
=100A
di/dt=4400A/
m
s
V
R
= 300V
T
j
=125
°
C
11.2
μC
di
rr1
/dt
di
rr2
/dt
T
j
=
25
°
C
T
j
=125
°
C
tbd
Peak rate of fall of reverse
recovery current
I
F
=100A
di/dt=4400A/
m
s
V
R
= 300V
A/
μ
s
S1
T
j
=25
°
C
tbd
Softness
S2
I
F
=100A
di/dt=4400A/
m
s
V
R
= 300V
T
j
=125
°
C
1
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