参数资料
型号: C67070-A2107-A70
厂商: SIEMENS AG
英文描述: IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
中文描述: IGBT功率模块(半桥包括快速续流二极管的绝缘金属基片包)
文件页数: 1/9页
文件大小: 114K
代理商: C67070-A2107-A70
Semiconductor Group
1
Mar-29-1996
BSM 100 GB 120 DN2K
IGBT Power Module
Half-bridge
Including fast free-wheeling diodes
Package with insulated metal base plate
Type
BSM 100 GB 120 DN2K
V
CE
1200V 145A
I
C
Package
HALF-BRIDGE 1
Ordering Code
C67070-A2107-A70
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
GE
= 20 k
Gate-emitter voltage
DC collector current
Symbol
V
CE
V
CGR
Values
1200
Unit
V
1200
V
GE
I
C
± 20
T
C
= 25 °C
T
C
= 80 °C
Pulsed collector current, t
p
= 1 ms
T
C
= 25 °C
T
C
= 80 °C
Power dissipation per IGBT
100
145
A
I
Cpuls
200
290
T
C
= 25 °C
Chip temperature
Storage temperature
P
tot
700
+ 150
W
T
j
T
stg
°C
-55 ... + 150
Thermal resistance, chip case
Diode thermal resistance, chip case
R
thJC
R
thJC
D
V
is
-
-
0.18
0.36
2500
20
11
K/W
Insulation test voltage, t= 1min.
Creepage distance
Clearance
Vac
mm
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
-
-
F
-
55 / 150 / 56
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C67070-A2301-A70 Circular Connector; No. of Contacts:32; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:22; Circular Contact Gender:Socket; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:22-32
C67070-A2514-A67 Circular Connector; No. of Contacts:41; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:22; Circular Contact Gender:Pin; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:22-41
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C67070-A2111-A70 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:IGBT Power Module (Half-bridge Including fast free-wheeling diodes Doubled diode area)
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