参数资料
型号: C67070-A2107-A70
厂商: SIEMENS AG
英文描述: IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
中文描述: IGBT功率模块(半桥包括快速续流二极管的绝缘金属基片包)
文件页数: 3/9页
文件大小: 114K
代理商: C67070-A2107-A70
Semiconductor Group
3
Mar-29-1996
BSM 100 GB 120 DN2K
Electrical Characteristics
, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
typ.
Unit
min.
max.
Switching Characteristics, Inductive Load at T
j
= 125 °C
Turn-on delay time
V
CC
= 600 V, V
GE
= 15 V, I
C
= 100 A
R
Gon
= 6.8
Rise time
t
d(on)
-
130
260
ns
V
CC
= 600 V, V
GE
= 15 V, I
C
= 100 A
R
Gon
= 6.8
Turn-off delay time
t
r
-
80
160
V
CC
= 600 V, V
GE
= -15 V, I
C
= 100 A
R
Goff
= 6.8
Fall time
t
d(off)
-
400
600
V
CC
= 600 V, V
GE
= -15 V, I
C
= 100 A
R
Goff
= 6.8
t
f
-
70
100
Free-Wheel Diode
Diode forward voltage
I
F
= 100 A, V
GE
= 0 V, T
j
= 25 °C
I
F
= 100 A, V
GE
= 0 V, T
j
= 125 °C
Reverse recovery time
I
F
= 100 A, V
R
= -600 V, V
GE
= 0 V
d
F
/dt= -1000 A/μs, T
j
= 125 °C
Reverse recovery charge
I
F
= 100 A, V
R
= -600 V, V
GE
= 0 V
d
F
/dt= -1000 A/μs
T
j
= 25 °C
T
j
= 125 °C
V
F
-
-
1.8
2.3
-
2.8
V
t
rr
-
0.3
-
μs
Q
rr
-
-
14
4
-
-
μC
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