参数资料
型号: C67070-A2107-A70
厂商: SIEMENS AG
英文描述: IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
中文描述: IGBT功率模块(半桥包括快速续流二极管的绝缘金属基片包)
文件页数: 4/9页
文件大小: 114K
代理商: C67070-A2107-A70
Semiconductor Group
4
Mar-29-1996
BSM 100 GB 120 DN2K
Power dissipation
P
tot
=
(T
C
)
parameter: T
j
150 °C
0
20
40
60
80
100
120
°C
T
C
160
0
50
100
150
200
250
300
350
400
450
500
550
600
W
750
P
tot
Safe operating area
I
C
=
(V
CE
)
parameter: D= 0, T
C
= 25°C , T
j
150 °C
-1
10
0
10
0
10
1
10
2
10
3
10
A
I
C
10
1
10
2
10
3
V
V
CE
DC
10 ms
1 ms
100 μs
tp = 16.0μs
Collector current
I
C
=
(T
C
)
parameter: V
GE
15 V , T
j
150 °C
0
20
40
60
80
100
120
°C
T
C
160
0
10
20
30
40
50
60
70
80
90
100
110
120
A
150
I
C
Transient thermal impedance IGBT
Z
th JC
=
(t
p
)
parameter: D = t
p
/ T
-4
10
-5
10
-3
10
-2
10
-1
10
0
10
K/W
Z
thJC
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
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